TPCP8207

Not Recommended for New Design

Power MOSFET (N-ch dual)

Description

Application Scope Motor Drivers / Mobile Equipments
Polarity N-ch×2
Generation U-MOSⅣ
Internal Connection Independent
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

Package Information

Toshiba Package Name PS-8
Package Image Toshiba TPCP8207 Power MOSFET (N-ch dual) product PS-8 package image
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)
2.9×2.8×0.8
Package Dimensions View
Land pattern dimensions View

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage (Q1/Q2) VDSS 40 V
Gate-Source voltage (Q1/Q2) VGSS +/-20 V
Drain current (Q1/Q2) ID 5.0 A
Power Dissipation PD 1.77 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Q1/Q2) (Max) Vth - 3.0 V
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=6V 62.8
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=10V 36.3
Input capacitance (Q1/Q2) (Typ.) Ciss - 505 pF
Total gate charge (Q1/Q2) (Typ.) Qg VGS=10V 11.8 nC

Document

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Dec,2015

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