Gate Drive for SiC MOSFET Module

This is the reference design for driving gates of the SiC MOSFET modules used in power conversion devices for industrial motor drives, etc. It can drive the gates of the SiC MOSFET modules with large currents by using external buffer MOSFETs.

This is a picture of Gate Drive for SiC MOSFET Module.
Board Appearance
TLP5231 TLP5231 TPC8132 TPC8132 SSM6K804R SSM6K804R SSM6K804R SSM6K804R TCR1HF50B TCR1HF50B SSM3K15AFS SSM3K15AFS 2SC6026MFV 2SC6026MFV TLP5231 TLP5231 TPC8132 TPC8132 SSM6K804R SSM6K804R SSM6K804R SSM6K804R TCR1HF50B TCR1HF50B SSM3K15AFS SSM3K15AFS 2SC6026MFV 2SC6026MFV

Click on components for more details

Features

  • Developed an isolated gate driver equipped with various protection functions for high-current / high-voltage SiC MOSFET modules
  • Parameters are set assuming combination with our SiC MOSFET modules (MG400V2YMS3, MG600Q2YMS3, MG250YD2YMS3)
  • Realized in the same size as our SiC MOSFET modules

Description

Power supply voltage for control DC24V
Number of driving channels 2 ch：Low-side, High-side
Gate control signal input 5V CMOS
Gate drive output +20V (Typ.) / -6.7V (Typ.)

Design Documents

Materials for designers, such as an overview of circuit operation and explanations of design considerations. Please click on each tab to view the contents.

Design Data

Provides circuit data that can be loaded into EDA tools, PCB layout data, and data used in PCB manufacturing. Available in formats from multiple tool vendors. You can freely edit it with your preferred tool.

Used Toshiba Items

Part Number Device Category Portion Usage Description
Photocoupler (photo-IC output) Pre driver・2 Photocoupler (photo-IC output), Power device pre-driver, IOP=+/-2.5 A, 5000 Vrms, SO16L
Power MOSFET (P-ch single) Turn on buffer・2 P-ch MOSFET, -40 V, 0.025 Ω@10V, SOP-8, U-MOSⅥ
Small Low ON resistance MOSFETs Turn off buffer・4 N-ch, MOSFET, 40V, 12A, 18mΩ@4.5V, TSOP6F
Low Dropout (LDO) Linear Voltage Regulator Generates control power supply voltage・4 High voltage, Low quiescent current, Fast load transient CMOS Linear Regulator
Small-signal MOSFET Input signal drive・２ N-ch MOSFET, 30 V, 0.1 A, 3.6 Ω@4V, SOT-416(SSM)
Transistor for low frequency small-signal amplification Fault detection signal output・2 NPN Bipolar Transistor, 50 V, 0.15 A, SOT-723(VESM)

Related Documents

We provide materials useful for designing and considering similar circuits, such as application notes for installed products. Please click on each tab to view the contents.

Applications

Mega-solar Inverters
Such as high efficiency and miniaturization are important in designing mega-solar inverter. Toshiba provides information on a wide range of semiconductor products suitable for inverter circuit unit, gate driving circuit unit, signal transmission unit, etc., along with circuit configuration examples.
Details
Inverter/Servo
Such as low power consumption, miniaturization and robust operation are important in designing inverter/servo. Toshiba provides information on a wide range of semiconductor products suitable for power supply unit, motor driving circuit units, signal transmission units, etc., along with circuit configuration examples.
Details

Contacts

Technical inquiry

Contact us

Contact us

Frequently Asked Questions

FAQs
A new window will open