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MOSFET Product lineup

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MOSFETs

Related Information

Application Notes  |  Catalog  |  General Catalog

Introduction

MOSFETs

Toshiba offers an extensive portfolio of low-VDSS and mid/high-VDSS MOSFETs in various circuit configurations and packages, featuring high speed, high performance, low loss, low on-resistance, small packaging, etc.

Toshiba has decades of experience in the development and manufacturing of MOSFETs. Its main products include the mid- to high-voltage DTMOS IV Series with a VDSS of 500V to 800V and the low-voltage UMOS Series with a VDSS of 12V to 250V.

Lineups

12V - 300V
MOSFETs

400V - 900V
MOSFETs

Automotive
MOSFETs

Small Low-On-Resistance MOSFETs

Voltage

Packages

Up to 3.3×3.3mm2 (SMD Type)

Applications / Purposes

RF MOSFETs
Whitepaper
Name outline Date of issue
Evolution of Devices Supporting Power
Electronics and Expansion of Technologies for
Mounting, Circuits, and Application to Products
8/2017

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Optimising power deisng through MOSFET efficiency and intergration 8/2017

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Dual side cooling package DSOP Advance: Thermal conductance innovation for power-MOSFET 8/2017

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Describes the features of the DTMOSV series and the improvements from the previous series 9/2017

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  • TO-247-4L
Describes the features of the new package and an operation analysis using simulation coming soon

  • e-tool
Cordless Power Tools: Delivering High Output Power, Extended Operation and Smaller Form Factors coming soon
Application note
Name outline Date of issue
Describes planar, trench and super-junction power MOSFETs 11/2016
Describes the absolute maximum ratings, thermal impedance and safe operating area of power MOSFETs 11/2016
Describes electrical characteristics shown in datasheets 11/2016
Describes how to select power MOSFETs, temperature characteristics, the impacts of wires and parasitic oscillation, avalanche ruggedness, snubber circuits and so on 11/2016
Describes thermal equivalent circuits, examples of channel temperature calculation and considerations for heatsink attachment 2/2017
Describes the guidelines for the design of a gate driver circuit for MOSFET switching applications and presents examples of gate driver circuits 8/2017

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Describes current imbalance in parallel MOSFETs and the mechanism of parasitic oscillation 8/2017

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Describes the oscillation mechanism of MOSFETs for switching applications 8/2017

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·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.