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1.6kW, 80Plus Platinum Class, High efficiency Server AC-DC Power suopply Reference Design

Related Information

Application Notes  |  Catalog  |  General Catalog



Toshiba offers an extensive portfolio of low-VDSS and mid/high-VDSS MOSFETs in various circuit configurations and packages, featuring high speed, high performance, low loss, low on-resistance, small packaging, etc.

Toshiba has decades of experience in the development and manufacturing of MOSFETs. Its main products include the mid- to high-voltage DTMOS IV Series with a VDSS of 500V to 800V and the low-voltage UMOS Series with a VDSS of 12V to 250V.




Applications / Purposes

New Products News

Series 20V 60V 600/650V
Package SOT-23F SOT-23F TO-220
TO-220TO-220SIS TO-220SIS
Recommended item SSM3K344R TK3R2E06PL
  • Industry-leading*1 low On-resistance
  • Small SOT-23F package and highly allowable power dissipation rating (2.4×2.9 mm, PD=1.0 W*2)
  • Industry-leading low On-resistance*1: RDS(ON)=3.2 mΩ (max) @VGS=10 V (TK3R2E06PL)
  • Low output charge
  • Supports logic level driving (4.5 V)
  • The EMI is improved by up to 5 dBμV/m*1 compared with existing products.
  • Mobile devices
  • Consumer equipment
  • Industrial equipment
  • Efficient DC-DC converters
  • Efficient AC-DC converters
  • Power supplies
  • Motor drives
  • Power supplies for industrial and office equipment
  • Adaptors/chargers for laptop PCs and mobile devices
  • PCs
  • Printers
*1: Comparison with the product of the same maximum rating, according to a survey by Toshiba (as of December 2016).
*2: Device mounted on a 25.4×25.4×1.6 mm FR-4 glass epoxy board (Cu pad: 645 mm2)
*1 As of June 2017, from a survey by Toshiba. *1: 240 to 270 MHz by using Toshiba evaluation boards (radiated emission). Toshiba survey.






Name outline Date of issue
Evolution of Devices Supporting Power
Electronics and Expansion of Technologies for
Mounting, Circuits, and Application to Products

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Optimising power deisng through MOSFET efficiency and intergration 8/2017

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Dual side cooling package DSOP Advance: Thermal conductance innovation for power-MOSFET 8/2017

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Describes the features of the DTMOSV series and the improvements from the previous series 9/2017

user registration

  • TO-247-4L
Describes the features of the new package and an operation analysis using simulation coming soon

  • e-tool
Cordless Power Tools: Delivering High Output Power, Extended Operation and Smaller Form Factors coming soon

Application note

Application note
Name outline Date of issue
Describes planar, trench and super-junction power MOSFETs 11/2016
Describes the absolute maximum ratings, thermal impedance and safe operating area of power MOSFETs 11/2016
Describes electrical characteristics shown in datasheets 11/2016
Describes how to select power MOSFETs, temperature characteristics, the impacts of wires and parasitic oscillation, avalanche ruggedness, snubber circuits and so on 11/2016
Describes thermal equivalent circuits, examples of channel temperature calculation and considerations for heatsink attachment 2/2017
Describes the guidelines for the design of a gate driver circuit for MOSFET switching applications and presents examples of gate driver circuits 8/2017

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Describes current imbalance in parallel MOSFETs and the mechanism of parasitic oscillation 8/2017

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Describes the oscillation mechanism of MOSFETs for switching applications 8/2017

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Name outline Date of issue
Describes the lineups of MOSFET 12/2017
Describes the lineups of Small Package(MOSFET/BJT/Diode/Linear IC/Logic/RF Device)
Describes the lineups of power and small-signal MOSFETs by package 3/2016


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·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.