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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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Schottky Barrier Diodes (SBDs)

A Schottky barrier diode (SBD) is a device in which a semiconductor and a metal such as molybdenum are bonded instead of a pn junction. In general, SBDs of n-type semiconductor and metal junctions are commercialized. It is suitable for high-speed switching applications, because of small forward voltage and short reverse recovery time[Note].

For the SBD there is a tradeoff between forward voltage (VF) and reverse current.
Depending on the metal used, in general, the breakdown voltage is about 20 to 150 V and the VF is about 0.4 to 0.7 V, which is lower than that of the pn junction diode.

SBDs with a new structure with low forward voltage but low reverse current have also been commercialized.
(Toshiba has achieved low VF and low reverse current characteristics by adopting a trench structure for SBD. )

Note: Since SBD is a unipolar device, it does not have reverse recovery time due to carrier recombination like pn junction diodes. However, the current waveform charging the capacity between the terminals of SBD is observed like the reverse recovery time of the p-n junction diode.

Therefore, it is described as reverse recovery time in this document.

Symbol and structure of Schottky barrier diode
Fig. 2-9(a) Symbol and structure of Schottky barrier diode
Electrical characteristics of Schottky barrier diode
Fig. 2-9(b) Electrical characteristics of Schottky barrier diode

Chapter II : Diodes

Types of Diodes
Functions of Rectifier Diodes
Forward Characteristic of Rectifier Diodes (IF-VF Characteristic)
FRDs (Fast Recovery Diodes)
Voltage Regulator Diodes (Zener Diodes)
TVS diode (ESD protection diode)
Difference between TVS Diodes and Zener Diodes (1)
Difference between TVS Diodes and Zener Diodes (2)
Variable-capacitance Diodes (Varicap Diodes)
Reverse Recovery Characteristic of Schottky Barrier Diodes (SBDs)
Difference Depending on Metal of Schottky Barrier Diodes (SBDs)
Characteristics Application of Various Diodes

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