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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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Chapter II : Diodes : Schottky Barrier Diodes (SBDs)

A Schottky barrier diode (SBD) is a device in which a semiconductor and a metal such as molybdenum are bonded instead of a pn junction. In general, semiconductors in which metals are bonded to n-type layers have been commercialized. It is suitable for high-speed switching applications, because of small forward voltage and short reverse recovery time.

For the SBD there is a tradeoff between forward voltage (VF) and reverse leakage current.
Depending on the metal used, in general, the reverse withstand voltage is about 20 to 150 V and the VF is about 0.4 to 0.7 V, which is lower than that of the pn junction diode.

SBDs with a new structure with low forward voltage but low leakage current have also been commercialized.

(Toshiba has achieved low VF and low leakage current characteristics by adopting a trench structure for SBD. )

Symbol and structure of Schottky barrier diode
Fig. 2-9(a) Symbol and structure of Schottky barrier diode
Electrical characteristics of Schottky barrier diode
Fig. 2-9(b) Electrical characteristics of Schottky barrier diode

Chapter II : Diodes

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