Schottky Barrier Diodes (SBDs)

A Schottky barrier diode (SBD) is a device in which a semiconductor and a metal such as molybdenum are bonded instead of a pn junction. In general, semiconductors in which metals are bonded to n-type layers have been commercialized. It is suitable for high-speed switching applications, because of small forward voltage and short reverse recovery time.

For the SBD there is a tradeoff between forward voltage (VF) and reverse leakage current.
Depending on the metal used, in general, the reverse withstand voltage is about 20 to 150 V and the VF is about 0.4 to 0.7 V, which is lower than that of the pn junction diode.

SBDs with a new structure with low forward voltage but low leakage current have also been commercialized.

(Toshiba has achieved low VF and low leakage current characteristics by adopting a trench structure for SBD. )

Symbol and structure of Schottky barrier diode
Fig. 2-9(a) Symbol and structure of Schottky barrier diode
Electrical characteristics of Schottky barrier diode
Fig. 2-9(b) Electrical characteristics of Schottky barrier diode

Chapter II : Diodes

Types of Diodes
Functions of Rectifier Diodes
Forward Characteristic of Rectifier Diodes (IF-VF Characteristic)
FRDs (Fast Recovery Diodes)
Voltage Regulator Diodes (Zener Diodes)
TVS diode (ESD protection diode)
Difference between TVS Diodes and Zener Diodes (1)
Difference between TVS Diodes and Zener Diodes (2)
Variable-capacitance Diodes (Varicap Diodes)
Reverse Recovery Characteristic of Schottky Barrier Diodes (SBDs)
Difference Depending on Metal of Schottky Barrier Diodes (SBDs)
Characteristics Application of Various Diodes

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