Power MOSFET (N-ch single 60V<VDSS≤150V)
| Application Scope | DC-DC Converters / Switching Voltage Regulators / Motor Drivers |
|---|---|
| Polarity | N-ch |
| Generation | U-MOSⅧ-H |
| Internal Connection | Single |
| RoHS Compatible Product(s) (#) | Available |
This product is under full production, but the following new product(s) are also recommended for new designs.
| Part Number | Compatible level | Notes |
|---|---|---|
| TPH3R10AQM | Package and characteristics are almost same | Slightly lower ON resistance |
| TPH5R60APL | Package and characteristics are almost same | Slightly higher ON resistance |
| Toshiba Package Name | SOP Advance |
|---|---|
| Package Image |
|
| Pins | 8 |
| Mounting | Surface Mount |
| Width×Length×Height (mm) |
5.0×6.0×0.95 |
| Package Dimensions | View |
| Land pattern dimensions | View |
| Ultra Librarian® CAD model (Symbol, Footprint and 3D model) |
![]() Download from UltraLibrarian® in your desired CAD format |
| SamacSys CAD model (Symbol, Footprint and 3D model) |
Download from SamacSys |
Please refer to the link destination to check the detailed size.
|
(Note1) |
Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®. |
|
(Note2) |
SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys. |
|
(Note3) |
Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website. |
| Characteristics | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-Source voltage | VDSS | 100 | V |
| Gate-Source voltage | VGSS | +/-20 | V |
| Drain current | ID | 93 | A |
| Power Dissipation | PD | 78 | W |
| Characteristics | Symbol | Condition | Value | Unit |
|---|---|---|---|---|
| Gate threshold voltage (Max) | Vth | - | 4.0 | V |
| Gate threshold voltage (Min) | Vth | - | 2.0 | V |
| Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=10V | 4.5 | mΩ |
| Input capacitance (Typ.) | Ciss | - | 4000 | pF |
| Total gate charge (Typ.) | Qg | VGS=10V | 58 | nC |
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