SSM3J35MFV

Not Recommended for New Design

Small-signal MOSFET

Description

Application Scope High-Speed Switching / Analog Switches
Polarity P-ch
Generation π-MOSⅥ
Internal Connection Single
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

Package Information

Toshiba Package Name SOT-723 (VESM)
Package Image Toshiba SSM3J35MFV Small-signal MOSFET product VESM package image
JEITA SC-105AA
Package Code SOT-723
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)
1.2×1.2×0.5
Package Dimensions View
Land pattern dimensions View
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>*1 *2

Download from UltraLibrarian® in your desired CAD format
*1 *2

 Please refer to the link destination to check the detailed size.

*1

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

*2

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS -20 V
Gate-Source voltage VGSS +/-10 V
Drain current ID -100 mA
Power Dissipation PD 0.15 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - -1.0 V
Gate threshold voltage (Min) Vth - -0.4 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4V 8.0 Ω
Drain-Source on-resistance (Max) RDS(ON) |VGS|=2.5V 11 Ω
Drain-Source on-resistance (Max) RDS(ON) |VGS|=1.5V 22 Ω
Drain-Source on-resistance (Max) RDS(ON) |VGS|=1.2V 44 Ω
Input capacitance (Typ.) Ciss - 12.2 pF

Document

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Oct,2015

Feb,2019

*

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

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Frequently Asked Questions

FAQs

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