SSM6J401TU

Not Recommended for New Design

Small Low ON resistance MOSFETs

Description

Application Scope DC-DC Converters / High-Speed Switching
Polarity P-ch
Generation U-MOSⅢ
Internal Connection Single
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

Package Information

Toshiba Package Name SOT-363F (UF6)
Package Image Toshiba SSM6J401TU Small Low ON resistance MOSFETs product UF6 package image
Package Code SOT-363F
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
2.0×2.1×0.7
Package Dimensions View
Land pattern dimensions View
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(Note1)

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

(Note2)

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS -30 V
Gate-Source voltage VGSS +/-20 V
Drain current ID -2.5 A
Power Dissipation PD 0.5 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - -2.6 V
Gate threshold voltage (Min) Vth - -1.2 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 73
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4V 145
Input capacitance (Typ.) Ciss - 730 pF
Total gate charge (Typ.) Qg VGS=-10V 16 nC

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Dec,2016

Apr,2025

Mar,2026

Mar,2026

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