SSM6N35FE

Not Recommended for New Design

Small-signal MOSFET 2 in 1

Description

Application Scope High-Speed Switching / Analog Switches
Polarity N-ch×2
Generation π-MOSⅥ
Internal Connection Independent
Component Product (Q1) SSM3K35MFV
Component Product (Q2) SSM3K35MFV
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

Package Information

Toshiba Package Name SOT-563 (ES6)
Package Image Toshiba SSM6N35FE Small-signal MOSFET 2 in 1 product ES6 package image
JEITA SC-107C
Package Code SOT-563
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
1.6×1.6×0.55
Package Dimensions View
Land pattern dimensions View
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(Note1)(Note2)

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(Note1)

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

(Note2)

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage (Q1/Q2) VDSS 20 V
Gate-Source voltage (Q1/Q2) VGSS +/-10 V
Drain current (Q1/Q2) ID 180 mA
Power Dissipation PD 0.15 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Q1/Q2) (Max) Vth - 1.0 V
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=1.2V 20 Ω
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=1.5V 8.0 Ω
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=2.5V 4.0 Ω
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=4V 3.0 Ω
Input capacitance (Q1/Q2) (Typ.) Ciss - 9.5 pF

Document

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Dec,2014

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