SSM6N35FE

不推薦用於新設計

Small-signal MOSFET 2 in 1

產品概要

Application Scope High-Speed Switching / Analog Switches
Polarity N-ch×2
Generation π-MOSⅥ
Internal Connection Independent
Component Product (Q1) SSM3K35MFV
Component Product (Q2) SSM3K35MFV
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

包裝資訊

Toshiba Package Name SOT-563 (ES6)
Package Image 東芝 SSM6N35FE Small-signal MOSFET 2 in 1產品 ES6 封裝圖片
JEITA SC-107C
Package Code SOT-563
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
1.6×1.6×0.55
Package Dimensions 檢視
Land pattern dimensions 檢視
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>(Note1)(Note2)

Download from UltraLibrarian® in your desired CAD format
(Note1)(Note2)

 Please refer to the link destination to check the detailed size.

(Note1)

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

(Note2)

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

絕對最大額定值

項目 符號 單位
Drain-Source voltage (Q1/Q2) VDSS 20 V
Gate-Source voltage (Q1/Q2) VGSS +/-10 V
Drain current (Q1/Q2) ID 180 mA
Power Dissipation PD 0.15 W

電器特性

項目 符號 條件 單位
Gate threshold voltage (Q1/Q2) (Max) Vth - 1.0 V
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=1.2V 20 Ω
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=1.5V 8.0 Ω
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=2.5V 4.0 Ω
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=4V 3.0 Ω
Input capacitance (Q1/Q2) (Typ.) Ciss - 9.5 pF

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Dec,2014

Mar,2026

Mar,2026

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