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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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Maximum Ratings (Ta = 25°C)
Characteristic | Symbol | Ratings | Unit |
---|---|---|---|
Collector-base voltage | VCBO | 60 | V |
Collector-emitter voltage | VCEO | 50 | V |
Emitter-base voltage | VEBO | 5 | V |
Collector current | IC | 150 | mA |
Base current | IB | 30 | mA |
Collector power dissipation | PC | 150 | mW |
Junction temperature | Tj | 125 | ℃ |
Storage temperature | Tstg | -55~125 | ℃ |
Definitions of the Terms in the Table
VCBO:
Absolute maximum voltage that can be applied across the collector and base terminals with the emitter terminal open
VCEO:
Absolute maximum voltage that can be applied across the collector and emitter terminals with the base terminal open
VEBO:
Absolute maximum voltage that can be applied across the emitter and base terminals with the collector terminal open
Collector current, IC:
Maximum DC (continuous) collector current
Base current, IB:
Maximum DC (continuous) base current
Collector power dissipation, PC:
Maximum allowable collector power dissipation
Junction temperature Tj:
Maximum junction temperature that the transistor can tolerate
Storage temperature Tstg:
Storage temperature range in which the device can be stored with no voltage applied
The following documents also contain related information: