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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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Reading individual technical datasheets for bipolar transistors

Maximum Ratings (Ta = 25°C)

Characteristic Symbol Ratings Unit
Collector-base voltage VCBO 60 V
Collector-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 5 V
Collector current IC 150 mA
Base current IB 30 mA
Collector power dissipation PC 150 mW
Junction temperature Tj 125
Storage temperature Tstg -55~125

Definitions of the Terms in the Table

VCBO:

Absolute maximum voltage that can be applied across the collector and base terminals with the emitter terminal open

VCEO:

Absolute maximum voltage that can be applied across the collector and emitter terminals with the base terminal open

VEBO:

Absolute maximum voltage that can be applied across the emitter and base terminals with the collector terminal open

Collector current, IC:

Maximum DC (continuous) collector current

Base current, IB:

Maximum DC (continuous) base current

Collector power dissipation, PC:

Maximum allowable collector power dissipation

Junction temperature Tj:

Maximum junction temperature that the transistor can tolerate

Storage temperature Tstg:

Storage temperature range in which the device can be stored with no voltage applied

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