Small Low ON resistance MOSFETs

  • Related Reference Design(2)


Application Scope Power Management Switches / DC-DC Converters
Feature Low drain-source on-resistance
Polarity N-ch
Generation U-MOSⅨ-H
Internal Connection Single
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

Package Information

Toshiba Package Name TSOP6F
Package Image TSOP6F
Pins 6
Mounting Surface Mount
Package Dimensions View
Land pattern dimensions View

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 40 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 12 A
Power Dissipation PD 3 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 2.4 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 18
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 12
Input capacitance (Typ.) Ciss - 1110 pF
Total gate charge (Typ.) Qg - 7.5 nC
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.


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Orderable part number

Orderable part number
MOQ(pcs) Reliability
RoHS AEC_Q100-Q101 Note
SSM6K804R,LF 3000 Yes - General Use
SSM6K804R,LXGF 3000 - Yes Yes (Note) Unintended Use (Note)

(Note):For more information, please contact our sales or use the inquiry form on our website.


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