The fifth-generation DTMOS V devices also display a well-balanced ratio of lower noise performance and switching performance, achieved through a modified gate structure and patterning.
Other substantial benefits to designers of power electronics include a figure-of-merit (FoM) of resistance x chip size that shows a 30% improvement over DTMOS III, leading to chips with lower values of RDS(ON) in the same package size.
DTMOS IV solutions with fast body diode offer recovery times in the region of 140ns, even at high temperature. This results in lower power losses, less heat generation and a more thermally efficient design. The superjunction process also reduces the output capacitance, COSS, by 12%, leading to a reduction in the waste energy being stored in the device (that has to be dissipated during each and every switching cycle). Which is why DTMOS is ideal for the fast-switching and resonant topologies commonly found in power designs.
Ultimately, the latest single epitaxy DTMOS devices simply generate less heat at the same performance levels as earlier devices. As less heat is generated, less heat has to be dissipated, thereby saving cost, space and weight by allowing for less stringent heat management requirements.
To learn more about the consistent and efficient performance of Toshiba's latest deep-trench MOSFETs, please click here.