MT3S113TU

停產產品

Radio-frequency SiGe Heterojunction Bipolar Transistor

產品概要

Application Scope VHF/UHF band low noise, low distortion amplifier
Polarity NPN
RoHS Compatible Product(s) (#) Available

包裝資訊

Toshiba Package Name SOT-323F (UFM)
Package Image 東芝 MT3S113TU Radio-frequency SiGe Heterojunction Bipolar Transistor產品 UFM 封裝圖片
Package Code SOT-323F
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)
2.0×2.1×0.7
Package Dimensions 檢視
Land pattern dimensions 檢視

 Please refer to the link destination to check the detailed size.

絕對最大額定值

項目 符號 單位
Collector Current IC 0.1 A
Collector power dissipation (mounted on board) PC 900 mW
Junction temperature Tj 150
Collector-emitter voltage VCEO 5.3 V

電器特性

項目 符號 條件 單位
Insertion Gain (Typ.) |S21|2 f=1GHz 12.5 dB
Transition frequency (Typ.) fT - 11.2 GHz
Noise Figure (Typ.) NF f=1GHz 1.15 dB

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