MT4S301U

不推薦用於新設計

Radio-frequency SiGe Heterojunction Bipolar Transistor

產品概要

Application Scope UHF/SHF band low noise amplifier
Polarity NPN
RoHS Compatible Product(s) (#) Available

包裝資訊

Toshiba Package Name USQ
Package Image USQ
Package Code SOT-343
Pins 4
Mounting Surface Mount
Width×Length×Height
(mm)
2.0×2.1×0.95
Package Dimensions 檢視
Land pattern dimensions 檢視

 Please refer to the link destination to check the detailed size.

絕對最大額定值

項目 符號 單位
Collector Current IC 0.035 A
Collector power dissipation PC 100 mW
Collector power dissipation (mounted on board) PC 250 mW
Junction temperature Tj 150
Collector-emitter voltage VCEO 4 V

電器特性

項目 符號 條件 單位
Insertion Gain (Typ.) |S21|2 f=2GHz 18.1 dB
Transition frequency (Typ.) fT - 27.5 GHz
Noise Figure (Typ.) NF f=2GHz 0.57 dB

文檔

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應用

Automotive V2X
Such as reduction of power supply and signal noise and reduction of power consumption are important in designing V2X. Toshiba provides information on a wide range of semiconductor products suitable for RF block units, power supply units, etc., along with circuit configuration examples.

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常見問答

Notes

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