Products
Knowledge
This webpage doesn't work with Internet Explorer. Please use the latest version of Google Chrome, Microsoft Edge, Mozilla Firefox or Safari.
require 3 characters or more.
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
require 3 characters or more.
When MOSFETs are used in parallel, a current imbalance is caused during switching transitions by a mismatch between each device characteristics and between circuit wiring layout of each MOSFETs.
This current imbalance could increase power losses and lead to destruction of a MOSFET. Exercise care concerning current imbalance.
Preventing this current imbalance.
For using MOSFETs in parallel, please refer to “MOSFET Paralleling (Parasitic Oscillation between Parallel Power MOSFETs): Power MOSFET Application Notes.”