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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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Find everything you need for your next product design. Simply select an application and click through to the block diagram to discover our semiconductor solutions.

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What are the considerations when using MOSFETs in parallel?

When MOSFETs are used in parallel, a current imbalance is caused during switching transitions by a mismatch between each device characteristics and between circuit wiring layout of each MOSFETs.
This current imbalance could increase power losses and lead to destruction of a MOSFET. Exercise care concerning current imbalance.

Preventing this current imbalance.

  1. Make a symmetrical layout of circuit wiring.
  2. Assemble MOSFETs to one heatsink so that the thermal dissipation condition is the same for each MOSFET.
  3. Use an external gate resistor for each MOSFET.
  4. Secure a large current margin, considering current imbalance.
    Based on consideration of the above items, please confirm that your circuit does not have a problem.


For using MOSFETs in parallel, please refer to “MOSFET Paralleling (Parasitic Oscillation between Parallel Power MOSFETs): Power MOSFET Application Notes.”