Automotive Junction Box

Automotive Junction Box

Such as reduction of power consumption and miniaturization are important in junction box. Toshiba provides information on a wide range of semiconductor products suitable for mechanical relay system, semiconductor relay system, etc., along with circuit configuration examples.

總方塊圖

點選總方塊圖中要查看詳細資訊的區域。顯示我們建議的子方塊圖的連結。

 MCU MCU ECU ECU Heater Heater LED LED CAN Line CAN Line OUT1 OUT1 OUT2 OUT2 OUT3 OUT3 OUTx OUTx GND GND GND GND Battery (12 V) Battery(12 V) Junction Box Junction Box Fuse Fuse Driver Driver Driver Driver Driver Driver Driver Driver Free Wheeling Diode Free Wheeling Diode TVS TVS M M Mechanical Relay Mechanical Relay TVS TVS Power Supply PowerSupply Mechanical relay system
Mechanical relay system

Example of junction box circuit of mechanical relay system

點選總方塊圖中要查看詳細資訊的區域。顯示我們建議的子方塊圖的連結。

 Power Supply PowerSupply ECU ECU Heater Heater LED LED Gate Driver Gate Driver Gate Driver Gate Driver Gate Driver Gate Driver CAN Line CAN Line Junction Box Junction Box GND GND GND GND OUT1 OUT1 OUT2 OUT2 OUT3 OUT3 OUTx OUTx Battery (12 V) Battery(12 V) Gate Driver Gate Driver MCU MCU MOSFET MOSFET MOSFET MOSFET MOSFET MOSFET MOSFET MOSFET Free Wheeling Diode Free Wheeling Diode M M Semiconductor Relay Semiconductor Relay TVS TVS TVS TVS Semiconductor relay system
Semiconductor relay system

Example of junction box circuit of semiconductor relay system

子方塊圖

Mechanical relay system
Mechanical relay system

Example of junction box circuit of mechanical relay system

Example of junction box circuit of mechanical relay system
MOSFET with a built-in active clamp circuit
器件型號
Toshiba Package Name SOT-23F SOT-23F
VDSS (Max) [V] 38 38
ID (Max) [A] 2.0 2.0
RDS(ON) (Max) [Ω] @ |VGS| = 4.5 [V] 0.41 0.176
Polarity N-ch + Active Clamp Zener N-ch + Active Clamp Zener
Low side switch / High side switch (up to 1 A)
器件型號
Toshiba Package name PS-8 (SON8-P) PS-8 (SON8-P) PS-8 (SON8-P)
VBB (Max) [V]      
VCC (Max) [V]      
IO (Max) [A]   1.0 0.8
General purpose small signal MOSFET
器件型號
Toshiba Package Name S-Mini S-Mini VESM
VDSS (Max) [V] 60 -60 -20
ID (Max) [A] 0.4 -0.4 -0.8
RDS(ON) (Max) [Ω] @ |VGS| = 4.5 [V] 1.75 1.9 0.39
Polarity N-ch P-ch P-ch
General purpose small signal bipolar transistor
器件型號
Toshiba Package Name SSM SSM USM USM S-Mini S-Mini
VCEO (Max) [V] -50 50 50 -50 50 -50
IC (Max) [A] -0.15 0.15 0.15 -0.15 0.15 -0.15
Polarity PNP NPN NPN PNP NPN PNP
Small signal bias resistor built-in transistor (BRT)
器件型號
Toshiba Package Name ES6 ES6 US6 US6
VCEO (Q1) (Max) [V] 50 -50 50 -50
VCEO (Q2) (Max) [V] 50 -50 50 -50
IC (Q1) (Max) [A] 0.1 -0.1 0.1 -0.1
IC (Q2) (Max) [A] 0.1 -0.1 0.1 -0.1
Polarity (Q1) NPN PNP NPN PNP
Polarity (Q2) NPN PNP NPN PNP
TVS diode (for CAN communication)
器件型號
Toshiba Package Name USM USM USM
VESD (Max) [kV] +/-30 +/-25 +/-20
IR (Max) [µA] 0.1 0.1 0.1
Rdyn (Typ.) [Ω] 0.8 1.1 1.5
CT (Typ.) [pF] @ VR = 0 [V], f = 1 [MHz] 9 9 6.5
Semiconductor relay system
Semiconductor relay system

Example of junction box circuit of semiconductor relay system

Example of junction box circuit of semiconductor relay system
U-MOS Series 40 V N-ch MOSFET
器件型號
Toshiba Package Name TSON Advance(WF) DPAK_plus SOP Advance(WF) DSOP Advance(WF)L S-TOGL L-TOGL
VDSS (Max) [V] 40 40 40 40 40 40
ID (Max) [A] 40 120 150 150 200 400
RDS(ON) (Max) [Ω] @ |VGS| = 10.0 [V] 0.0038 0.00135 0.00079 0.00079 0.00066 0.00030
Polarity N-ch N-ch N-ch N-ch N-ch N-ch
Gate driver (for switch)
器件型號
Toshiba Package name PS-8 (SON8-P) SSOP16 WSON10A
VBB (Max) [V]      
VCC (Max) [V]      
IO (Max) [A] +5mA/ Internally Limited   Internally Limited /-5m
General purpose small signal MOSFET
器件型號
Toshiba Package Name S-Mini S-Mini VESM
VDSS (Max) [V] 60 -60 -20
ID (Max) [A] 0.4 -0.4 -0.8
RDS(ON) (Max) [Ω] @ |VGS| = 4.5 [V] 1.75 1.9 0.39
Polarity N-ch P-ch P-ch
General purpose small signal bipolar transistor
器件型號
Toshiba Package Name SSM SSM USM USM S-Mini S-Mini
VCEO (Max) [V] -50 50 50 -50 50 -50
IC (Max) [A] -0.15 0.15 0.15 -0.15 0.15 -0.15
Polarity PNP NPN NPN PNP NPN PNP
Small signal bias resistor built-in transistor (BRT)
器件型號
Toshiba Package Name ES6 ES6 US6 US6
VCEO (Q1) (Max) [V] 50 -50 50 -50
VCEO (Q2) (Max) [V] 50 -50 50 -50
IC (Q1) (Max) [A] 0.1 -0.1 0.1 -0.1
IC (Q2) (Max) [A] 0.1 -0.1 0.1 -0.1
Polarity (Q1) NPN PNP NPN PNP
Polarity (Q2) NPN PNP NPN PNP
TVS diode (for CAN communication)
器件型號
Toshiba Package Name USM USM USM
VESD (Max) [kV] +/-30 +/-25 +/-20
IR (Max) [µA] 0.1 0.1 0.1
Rdyn (Typ.) [Ω] 0.8 1.1 1.5
CT (Typ.) [pF] @ VR = 0 [V], f = 1 [MHz] 9 9 6.5

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