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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
In the basic form, a bias resistor built-in transistor (BRT) is composed of either an NPN or PNP transistor and two resistors (a series base resistor (R1) and a base-emitter resistor (R2)). These three devices are housed in one package. Single (1-in-1) and dual (2-in-1) BRTs are also available. Dual BRTs are available in common-emitter, point-symmetrical, and parallel configurations with different pinouts.
The following figure shows each type of NPN BRT.
Toshiba provides a wide range of BRTs, including PNP BRTs and dual BRTs containing NPN and PNP transistors in a point-symmetrical configuration.