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型號需要超過三個文字以上
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
型號需要超過三個文字以上
12 V DC-DC converter (Isolated type)
Example of 12 V isolated step down DC-DC converter
Lineup
U-MOS Series 40V / 80 V / 100 V N-ch MOSFET
| Part number | Drain-source voltage | Drain current |
On-resistance (Max) |
Package |
|---|---|---|---|---|
| XPQ1R004PB* | 40 V | 200 A | 1.0 mΩ | L-TOGL™ |
| XPQR3004PB* | 40 V | 400 A | 0.3 mΩ | |
| XPQR8308QB* | 80 V | 400 A | 0.83 mΩ | |
| XPQ1R00AQB* | 100 V | 400 A | 1.0 mΩ |
* : Under development (The specification is subject to change without notice.)
* : L-TOGL is a trademark of Toshiba Electronic Devices & Storage Corporation.
Transistor output photocoupler
| Part number | TLX9291A / TLX9185A | TLX9000 / TLX9300 |
|---|---|---|
| Isolation Voltage [Vrms] | 3750 | 3750 |
| Collector-emitter voltage [V] | 80 | 40 |
| Dark current [nA] @Ta=125 °C | < 100 @ VCE=48 V | < 10 @ VCE=24 V |
| Conversion efficiency [%] @ IF=5 mA, VCE=5 V, Ta=25 °C |
50 to 600 100 to 600 (GB rank) |
100 to 900 |
| Conversion efficiency (saturation) [%] @ IF=1 mA, VCE=0.4 V, Ta=25 °C |
> 30 | > 30 |
| AEC-Q101 | ✔ | ✔ |
TVS diode (for CAN communication)
| Part number | DF3D18FU | DF3D29FU | DF3D36FU |
|---|---|---|---|
| Package | USM (SOT-323) | ||
| VESD [kV] @ISO 10605 | ±30 | ±30 | ±20 |
| VRWM (Max) [V] | 12 | 24 | 28 |
| Ct (Typ. / Max) [pF] | 9 / 10 | 6.5 / 8 | |
| RDYN (Typ.) [Ω] | 0.8 | 1.1 | 1.5 |
General purpose small signal MOSFET
| Part number | SSM3K7002KF | SSM3J168F | SSM3J66MFV | |
|---|---|---|---|---|
| Package | ||||
| VDSS [V] | 60 | -60 | -20 | |
| ID [A] | 0.4 | -0.4 | -0.8 | |
RDS(ON) @|VGS| = 4.5 V [Ω] |
Typ. | 1.2 | 1.4 | 0.31 |
| Max | 1.75 | 1.9 | 0.39 | |
| Drive voltage [V] | 4.5 | -4.0 | -1.2 | |
| Polarity | N-ch | P-ch | P-ch | |
General purpose small signal bipolar transistor
Small signal bias resistor built-in transistor (BRT)
| Part number | NPN (BRT) | PNP (BRT) | |
|---|---|---|---|
| Package | ES6 (SOT-563) | RN1907FE | RN2907FE |
| US6 (SOT-363) | RN1901 | RN2901 | |
| VCEO (Max) [V] | 50 | -50 | |
| IC [mA] | 100 | -100 | |