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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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Find everything you need for your next product design. Simply select an application and click through to the block diagram to discover our semiconductor solutions.

新產品/新聞

Full-bridge inverter circuit

Example of inverter circuit using discrete solution and control IC

Full-bridge inverter circuit

Lineup

Schottky barrier diode

Part number

CUHS20F30

CUHS20F40

CUHS10F60

CUHS15F60 CUHS20F60 CUHS15S60 CUHS20S60

Package

US2H

VR [V] 

30

40

60

60 60 60 60

IO [A] 

2

2

1

1.5 2 1.5 2

VF (Typ.) [V]
@I= 1 A

0.35

0.39

0.56

0.55 0.41 0.48 0.35
IR (Max) [μA] 60
@VR = 30 V
60
@VR = 40 V
40
@VR = 60 V
50
@VR = 60 V
70
@VR = 60 V
450
@VR = 60 V
650
@VR = 60 V

U-MOS Series MOSFET

Part number

TPN7R504PL

TPN8R408QM TPN12008QM TPH7R204PL TK90S06N1L TK5R1P08QM TK6R9P08QM

Package

TSON Advance

SOP Advance DPAK+ DPAK

VDSS [V] 

40

80 80 40 60 80

80

IO [A] 

38 (68*)

32 (77*) 26 (60*) 48 (72*) 90 84 (105*)

62 (83*)

RDS(ON) [mΩ]
@VGS = 10 V

Typ.

5.6

6.5 9.6 5.4 2.7 4.2

5.5

Max

7.5

8.4 12.3 7.2 3.3 5.1

6.9

Polarity N-ch N-ch N-ch N-ch N-ch N-ch N-ch
Generation U-MOSⅨ-H U-MOSⅩ-H U-MOSⅩ-H U-MOSⅨ-H U-MOSⅧ-H U-MOSⅩ-H U-MOSⅩ-H

*Silicon limit

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