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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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The energy required for electrons and holes to transition from the valence band to the conduction band is called a band gap. Si (Silicon) has a band gap of 1.12 eV (electron volt). A semiconductor with a large value is called a wide-band-gap semiconductor. SiC (Silicon Carbide) and GaN (Gallium Nitride) are wide-band-gap semiconductors.
Physical property constants of typical semiconductor materials are shown in the table below.
Since wide-band-gap semiconductors have small lattice constants, the bond strength between atoms becomes strong. This means high electric breakdown field and thermal conductivity.
The band gap of 4H-SiC is 3.26 eV, and the electric breakdown field is 2.8 × 106, which is a very large value compared with that of Si, 3 × 105.
Physical property constants of Si and main wide-band-gap semiconductors
Property | Unit | Si | 4H-SiC | 6H-SiC | 3C-SiC | GaN | GaAs | Diamond |
---|---|---|---|---|---|---|---|---|
Band gap | eV | 1.12 | 3.26 | 3.02 | 2.23 | 3.39 | 1.43 | 5.47 |
Electron mobility μe | cm2/Vs | 1400 | 1000/1200 | 450/100 | 1000 | 900 | 8500 | 2200 |
Hole mobility μh | 600 | 120 | 100 | 50 | 150 | 400 | 1600 | |
Electric breakdown field Ec |
V/cm | 3.0×105 | 2.8×106 | 3.0×106 | 1.5×106 | 3.3×106 | 4.0×105 | 1.0×107 |
Thermal conductivity λ | W/cmK | 1.5 | 4.9 | 4.9 | 4.9 | 2.0 | 0.5 | 20 |
Saturated electron drift velocity Vsat |
cm/s | 1.0×107 | 2.2×107 | 1.9×107 | 2.7×107 | 2.7x107 | 2.0×107 | 2.7×107 |
Relative dielectric constant ε |
11.8 | 9.7/10.2 | 9.7/10.2 | 9.7 | 9.0 | 12.8 | 5.5 |