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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
Discrete semiconductor devices do not impose any restrictions for operating temperature.
This is because, unlike in the case of an IC, the heat generated in the element varies depending on the usage condition of the customer. The channel temperature of the device is calculated from voltage, current, etc. applied to the device. For discrete semiconductor devices such as MOSFETs, the maximum value of this channel temperature is specified.
Although use at the maximum channel temperature Tch (max) or less is possible, reliability such as deterioration, life span, etc. must be considered. Degradation, such as performance degradation, accelerates as channel temperature rises.
In order to maintain stable performance for a long period of time on your equipment, please design with derating to the maximum channel temperature Tch (max).
For information on derating, please refer to the following document.
Document title “Concepts of Derating”