TK35S04K3L

不推薦用於新設計

Power MOSFET (N-ch single 30V<VDSS≤60V)

產品概要

Application Scope Automotive / Motor Drivers / DC-DC Converters / Switching Voltage Regulators
Polarity N-ch
Generation U-MOSⅣ
Internal Connection Single
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

包裝資訊

Toshiba Package Name DPAK+
Package Image 東芝 TK35S04K3L Power MOSFET (N-ch single 30V&lt;VDSS&le;60V)產品 DPAK+ 封裝圖片
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)
6.5×9.5×2.3
Package Dimensions 檢視
Land pattern dimensions 檢視
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>(Note1)(Note2)

Download from UltraLibrarian® in your desired CAD format
(Note1)(Note2)

 Please refer to the link destination to check the detailed size.

(Note1)

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

(Note2)

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

絕對最大額定值

項目 符號 單位
Drain-Source voltage VDSS 40 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 35 A
Power Dissipation PD 58 W

電器特性

項目 符號 條件 單位
Gate threshold voltage (Max) Vth - 3.0 V
Gate threshold voltage (Min) Vth - 2.0 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=6V 15
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 10.3
Input capacitance (Typ.) Ciss - 1370 pF
Total gate charge (Typ.) Qg VGS=10V 28 nC
Reverse recovery time (Typ.) trr - 35 ns
Reverse recovery charge (Typ.) Qrr - 17 nC

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Apr,2015

Aug,2023

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