TPC8132

Power MOSFET (P-ch single)

  • 相關參考設計(1)
TPC8132

產品概要

Application Scope Lithium-Ion Secondary Batteries / Power Management Switches
Polarity P-ch
Generation U-MOSⅥ
Internal Connection Single
RoHS Compatible Product(s) (#) Available

包裝資訊

Toshiba Package Name SOP-8
Package Image SOP-8
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)
4.9×6.0×1.52
Package Dimensions 檢視
Land pattern dimensions 檢視
CAD data
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format (Note)

Download from UltraLibrarian® in your desired CAD format (Note)

 Please refer to the link destination to check the detailed size.

(Note)

Ultra Librarian® is a Registered trademark and CAD data library of EMA (EMA Design Automation, Inc.).

絕對最大額定值

項目 符號 單位
Drain-Source voltage VDSS -40 V
Gate-Source voltage VGSS +20/-25 V
Drain current ID -7.0 A
Power Dissipation PD 1.9 W

電器特性

項目 符號 條件 單位
Gate threshold voltage (Max) Vth - -2.0 V
Gate threshold voltage (Min) Vth - -0.8 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 25
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 33
Input capacitance (Typ.) Ciss - 1580 pF
Total gate charge (Typ.) Qg VGS=-10V 34 nC
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文檔

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Nov,2015

Aug,2024

Oct,2024

Orderable part number

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS
TPC8132,LQ 2500 Yes

參考設計

This is a picture of Gate Drive for SiC MOSFET Module.
Gate Drive for SiC MOSFET Module
In recent years, SiC MOSFET modules have become popular compared to conventional IGBT modules as they have a smaller size and lower loss, which is useful in power conversion applications such as industrial motor drives and railway inverters. This is a gate drive circuit with various protection functions which can safely drive a SiC MOSFET module.
This design uses the TLP5231 pre-driver coupler, which is capable of high-current gate drive with external buffer MOSFETs and has various built-in protection functions to implement the isolated-gate drive of a high-current/high-voltage SiC MOSFET module. It consists of two channels, high-side and low-side, on a 62mm x 100mm board and can be installed on Toshiba dual MOSFET modules.
Design tips on each portion of the circuit, method of operation, and design information such as circuit diagrams and PCB patterns are available, please use them for your design.

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常見問答

Notes

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