Power supply ON/OFF control and reverse connection protection circuit (N-ch type)

Example of ON/OFF control and reverse connection protection circuit using N-ch MOSFET for 12 V power lines.

Pump driving circuit (Three-phase motor)

Lineup

U-MOS Series 40 V N-ch MOSFET

Part number

Rated drain current [A]

On-resistance (Max)

[mΩ] @VGS = 10 V

Package

XPN3R804NC

40

3.8

TSON Advance(WF)

TK1R4S04PB

120

1.35

DPAK+

XPHR7904PS

150

0.79

SOP Advance(WF)

TPWR7904PB

150

0.79

DSOP Advance(WF)L

XPJR6604PB*

(200)

(0.66)

S-TOGLTM

XPQR3004PB

400

0.30

L-TOGLTM

* Under development (Values enclosed in parentheses are tentative specifications. Specifications are subject to change without notice.)

Gate driver (for switch)

Part number

TPD7104AF

TPD7106F

TPD7107F

Package

PS-8 (2.8 x 2.9 mm)

SSOP16 (5.5 x 6.4 mm)

WSON10A (3 x 3 mm)

Function High side gate driver High side gate driver High side gate driver
Output 1 1 1

Features

  • Operating power supply voltage range: 5 to 18 V
  • Built-in power supply reverse connection protection function
    (Protective MOSFET control with back-to-back circuitry)
  • Operating power supply voltage range: 4.5 to 27 V
  • Built-in power supply reverse connection protection function (Protective MOSFET control with back-to-back circuitry)
  • Operating power supply voltage range: 5.75 to 26 V
  • Current sense output
  • Protective functions; overcurrent, overtemperature,GND disconnect, etc. reverse battery connection
  • Diagnosis output;overcurrent, load open, overtemperature, etc.

General purpose small signal MOSFET

Part number

SSM3K7002KF

SSM3J168F

SSM3J66MFV

Package

S-Mini

(SOT-346)

S-Mini

(SOT-346)

VESM

(SOT-723)

VDSS [V]

60

-60

-20

ID [A]

0.4

-0.4

-0.8

RDS(ON)@|VGS| = 4.5 V [Ω]

Typ.

1.2

1.4

0.31

Max

1.75

1.9

0.39

Drive voltage [V]

4.5

-4.0

-1.2

Polarity

N-ch

P-ch

P-ch

General purpose small signal bipolar transistor

Package

SSM (SOT-416)

USM (SOT-323)

UFM (SOT-323F)*

S-Mini (SOT-346)

Classification

|VCEO| [V]

|IC| [mA]

NPN

PNP

NPN

PNP

NPN

PNP

General purpose

50

150

 

 

2SC4116

2SA1586

2SC2712

2SA1162

50

500

       

2SC3325

2SA1313

Low noise

120

100

   

2SC4117

2SA1587

2SC2713

2SA1163

High current

50

1700

     

2SA2195*

   
50 2000   TTA501        
50 2500 TTC501          

* indicates UFM package

Small signal bias resistor built-in transistor (BRT)

Part number

NPN (BRT)

PNP (BRT)

Package

ES6 (SOT-563)

RN1907FE

RN2907FE

US6 (SOT-363)

RN1901

RN2901

VCEO [V]

50

-50

IC [mA]

100

-100

TVS diode (for CAN communication)

Part number

DF3D18FU

DF3D29FU

DF3D36FU

Package

USM

(SOT-323)

VESD [kV] @ISO 10605

±30

±30

±20

VRWM (Max) [V]

12

24

28

C(Typ./Max) [pF]

9 / 10

6.5 / 8

RDYN (Typ.) [Ω]

0.8

1.1

1.5

Power supply IC (for MCU)

Part number

TB9005FNG

Package

SSOP20
(6.4 x 7.0 mm)

Current consumption ICC  (Typ.) [μA]

90 (@VIN = 12 V, Ta = 25 °C) 

Load stability VLOAD (Max) [%]

1 (@ILOAD = 1 to 300 mA)

Function

Number of outputs

1ch (5 V)

Circuit type

External transistor type

WDT, Overcurrent limitation

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* S-TOGLTM and L-TOGLTM are trademarks of Toshiba Electronic Devices & Storage Corporation.
* Other company names, product names, and service names may be trademarks of their respective companies.

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