Automotive V2X

Automotive V2X

Such as reduction of power supply and signal noise and reduction of power consumption are important in designing V2X. Toshiba provides information on a wide range of semiconductor products suitable for RF block units, power supply units, etc., along with circuit configuration examples.

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 GNSS GNSS LNA LNA V2X Transceiver /Processor V2X Transceiver /Processor LNA LNA Filter Filter V2N V2N V2V / V2I / V2P V2V / V2I / V2P CAN Transceiver CANTransceiver Level Shifter LevelShifter TVS TVS MCU MCU CAN LINE CAN LINE Other ECU Other ECU Battery (12 V) Battery(12 V) Reverse Battery Protection / Load Switch Reverse Battery Protection /Load Switch LPF LPF DC-DC DC-DC Switch Switch LNA LNA PA PA Switch Switch LNA LNA PA PA TVS TVS TVS TVS TVS TVS [Note1] GNSS: Global Navigation Satellite System [Global posi... [Note1] GNSS: Global Navigation Satellite System[Global positioning satellite system: generic term for satellite positioning systems such as GPSs, GLONASS, Galileo, quasi-top satellites (QZSS)] [Note1] [Note1] Antenna peripheral circuit 12 V DC-DC converter (non-isolated buck type) Power supply ON/OFF control and reverse connection protection circuit
Antenna peripheral circuit​

Example of antenna peripheral circuit for V2X​

12 V DC-DC converter (non-isolated buck type)

Example of 12 V DC-DC converter (non-isolated buck type)

Power supply ON/OFF control and reverse connection protection circuit

Example of ON/OFF control and reverse connection protecting circuit using P-ch MOSFET for 12 V power lines

Example of ON/OFF control and reverse connection protecting circuit using N-ch MOSFET for 12 V power lines

子方塊圖

Antenna peripheral circuit​
Antenna peripheral circuit​

Example of antenna peripheral circuit for V2X​

Example of antenna peripheral circuit for V2X​
Radio frequency SiGe bipolar transistor
器件型號
Toshiba Package Name USQ USQ
VCEO (Max) [V] 4 4
IC (Max) [A] 0.05 0.035
fT (Typ.) [GHz] 26.5 27.5
NF (Typ.) [dB] @ f = 2 [GHz] 0.55 0.57
Polarity NPN NPN
12 V DC-DC converter (non-isolated buck type)
12 V DC-DC converter (non-isolated buck type)

Example of 12 V DC-DC converter (non-isolated buck type)

Example of 12 V DC-DC converter (non-isolated buck type)
U-MOS Series 40 V N-ch MOSFET
器件型號
Toshiba Package Name TSON Advance(WF) DPAK_plus SOP Advance(WF) DSOP Advance(WF)L TO-220SM(W) D2PAK_plus
VDSS (Max) [V] 40 40 40 40 40 40
ID (Max) [A] 40 120 150 150 250 160
RDS(ON) (Max) [Ω] @ |VGS| = 10.0 [V] 0.0038 0.00135 0.00079 0.00079 0.00074 0.0015
Polarity N-ch N-ch N-ch N-ch N-ch N-ch
Power supply ON/OFF control and reverse connection protection circuit
Power supply ON/OFF control and reverse connection protection circuit (P-ch type)

Example of ON/OFF control and reverse connection protecting circuit using P-ch MOSFET for 12 V power lines

Example of ON/OFF control and reverse connection protecting circuit using P-ch MOSFET for 12 V power lines
U-MOS series -40V / -60V P-ch MOSFET
器件型號
Toshiba Package Name DPAK_plus DPAK_plus SOP Advance(WF) TO-220SM(W)
VDSS (Max) [V] -40 -60 -40 -40
ID (Max) [A] -90 -60 -100 -200
RDS(ON) (Max) [Ω] @ |VGS| = 10.0 [V] 0.0043 0.0112 0.0031 0.0018
Polarity P-ch P-ch P-ch P-ch
General purpose small signal MOSFET
器件型號
Toshiba Package Name S-Mini S-Mini VESM
VDSS (Max) [V] 60 -60 -20
ID (Max) [A] 0.4 -0.4 -0.8
RDS(ON) (Max) [Ω] @ |VGS| = 4.5 [V] 1.75 1.9 0.39
Polarity N-ch P-ch P-ch
General purpose small signal bipolar transistor
器件型號
Toshiba Package Name SSM SSM USM USM S-Mini S-Mini
VCEO (Max) [V] -50 50 50 -50 50 -50
IC (Max) [A] -0.15 0.15 0.15 -0.15 0.15 -0.15
Polarity PNP NPN NPN PNP NPN PNP
Small signal bias resistor built-in transistor (BRT)
器件型號
Toshiba Package Name ES6 ES6 US6 US6
VCEO (Q1) (Max) [V] 50 -50 50 -50
VCEO (Q2) (Max) [V] 50 -50 50 -50
IC (Q1) (Max) [A] 0.1 -0.1 0.1 -0.1
IC (Q2) (Max) [A] 0.1 -0.1 0.1 -0.1
Polarity (Q1) NPN PNP NPN PNP
Polarity (Q2) NPN PNP NPN PNP
TVS diode (for CAN communication)
器件型號
Toshiba Package Name USM USM USM
VESD (Max) [kV] +/-30 +/-25 +/-20
IR (Max) [µA] 0.1 0.1 0.1
Rdyn (Typ.) [Ω] 0.8 1.1 1.5
CT (Typ.) [pF] @ VR = 0 [V], f = 1 [MHz] 9 9 6.5
Power supply ON/OFF control and reverse connection protection circuit (N-ch type)​

Example of ON/OFF control and reverse connection protecting circuit using N-ch MOSFET for 12 V power lines

Example of ON/OFF control and reverse connection protecting circuit using N-ch MOSFET for 12 V power lines
U-MOS Series 40 V N-ch MOSFET
器件型號
Toshiba Package Name TSON Advance(WF) DPAK_plus SOP Advance(WF) DSOP Advance(WF)L TO-220SM(W) D2PAK_plus
VDSS (Max) [V] 40 40 40 40 40 40
ID (Max) [A] 40 120 150 150 250 160
RDS(ON) (Max) [Ω] @ |VGS| = 10.0 [V] 0.0038 0.00135 0.00079 0.00079 0.00074 0.0015
Polarity N-ch N-ch N-ch N-ch N-ch N-ch
Gate driver (for switch)
器件型號
Toshiba Package name PS-8 (SON8-P) SSOP16 WSON10A
VBB (Max) [V]      
VCC (Max) [V]      
IO (Max) [A] +5mA/ Internally Limited   Internally Limited /-5m
General purpose small signal MOSFET
器件型號
Toshiba Package Name S-Mini S-Mini VESM
VDSS (Max) [V] 60 -60 -20
ID (Max) [A] 0.4 -0.4 -0.8
RDS(ON) (Max) [Ω] @ |VGS| = 4.5 [V] 1.75 1.9 0.39
Polarity N-ch P-ch P-ch
General purpose small signal bipolar transistor
器件型號
Toshiba Package Name SSM SSM USM USM S-Mini S-Mini
VCEO (Max) [V] -50 50 50 -50 50 -50
IC (Max) [A] -0.15 0.15 0.15 -0.15 0.15 -0.15
Polarity PNP NPN NPN PNP NPN PNP
Small signal bias resistor built-in transistor (BRT)
器件型號
Toshiba Package Name ES6 ES6 US6 US6
VCEO (Q1) (Max) [V] 50 -50 50 -50
VCEO (Q2) (Max) [V] 50 -50 50 -50
IC (Q1) (Max) [A] 0.1 -0.1 0.1 -0.1
IC (Q2) (Max) [A] 0.1 -0.1 0.1 -0.1
Polarity (Q1) NPN PNP NPN PNP
Polarity (Q2) NPN PNP NPN PNP
TVS diode (for CAN communication)
器件型號
Toshiba Package Name USM USM USM
VESD (Max) [kV] +/-30 +/-25 +/-20
IR (Max) [µA] 0.1 0.1 0.1
Rdyn (Typ.) [Ω] 0.8 1.1 1.5
CT (Typ.) [pF] @ VR = 0 [V], f = 1 [MHz] 9 9 6.5

解決方案

這些文件說明推薦的半導體產品的要點及其特徵,方便產品選擇。

參考設計

Example of TPD7106F Application Circuit.
Single-Output High-Side N-Channel Power MOSFET Gate Driver Application and Circuit of the TPD7106F
This reference design provides examples of application circuit and simulation for TPD7106F which features power supply reverse connection, charge pumpccircuit and others.
Semiconductor / Design & Development / Reference Design Center / Battery Management
Short circuit detection circuit block diagram of single-output High-Side N-Channel Power MOSFET Gate Driver application and circuit of the TPD7104AF.
Single-Output High-Side N-Channel Power MOSFET Gate Driver Application and Circuit of the TPD7104AF
This reference design provides examples of application circuit and simulation for TPD7104AF which features short load protection, reverse power connection protection and others.
Semiconductor / Design & Development / Reference Design Center / Battery Management

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