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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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型號需要超過三個文字以上
Inverter gate drive circuit
Example of gate-driving circuit of power MOSFET for driving output MOSFET
Lineup
Power MOSFET
MCU
| Part number | |
|---|---|
Maximum operation frequency |
80 MHz |
Instruction ROM |
512 KB |
RAM |
128 KB |
| 3-phase PWM output | 2ch |
| Ethernet MAC | 1ch |
| USB2.0 | Host 1ch, Device 1ch |
| CAN, UART | 1ch, 4ch |
SiC MOSFET module (under development）
Part number |
MG400V2YMS3 |
|---|---|
VDSS [V] |
1700 |
ID [A] |
400 |
| VDS(on)sense (Typ.) [V] @ID=400 A, VGS=20 V, Tch=25 °C |
1.1 |
Polarity |
N-ch |