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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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型號需要超過三個文字以上
Magnetron drive circuit (Using bipolar transistor)
Example of magnetron drive circuit using bipolar transistor
Lineup
Bipolar transistor
Bipolar transistor for IGBT gate drive
Discrete IGBT
Part number |
GT30J110SRA | GT30N135SRA | |
|---|---|---|---|
Package |
TO-3P(N) | TO-247 | |
VCES [V] |
1200 |
1100 |
1350 |
| tf (Typ.) [μs] | 0.20 @IC = 40 A | 0.17 @IC = 60 A | 0.25 @IC = 60 A |
| VCE(sat) (Typ.) [V] | 1.9 @IC = 40 A | 2.15 @IC = 60 A | 2.15 @IC = 60 A |
MCU
Part number |
|
|---|---|
Maximum operation frequency |
40 MHz |
Instruction ROM |
64 KB |
RAM |
8 KB |
Arm® Thumb® -2 Instruction set |
Available |
Timer |
16bit x 8ch |
| I2C | 1ch |
| AD converter | 10ch (12bit) |
* Arm and Thumb are registered trademarks of Arm Limited (or its subsidiaries) in the US and/or elsewhere.
* Other company names, product names, and service names may be trademarks of their respective companies.