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SiC (Silicon Carbide) is a wide-band-gap semiconductor. Compared with Si (Silicon), as shown in the table below, it is characterized by high band gap, high electric breakdown field, high saturation speed, etc.
When reverse bias is applied to the SBD of a general structure, the depletion layer expands from the metal-semiconductor interface. The image of the electric field at this time is as shown in the figure, and is the maximum at the metal-semiconductor interface. The breakdown electric field is the theoretical maximum value of the electric field and the withstand voltage is equal to the area of the triangle indicated by the width of the depletion layer and the electric field.
Since the breakdown electric field of SiC is about 10 times that of Si, SiC SBD with high withstand voltage can be formed.
Physical characteristics of Si and main wide-band-gap semiconductors
Property | Unit | Si | 4H-SiC | 6H-SiC | 3C-SiC | GaN | GaAs | Diamond |
---|---|---|---|---|---|---|---|---|
Band gap | eV | 1.12 | 3.26 | 3.02 | 2.23 | 3.39 | 1.43 | 5.47 |
Electron mobility μe | cm2/Vs | 1400 | 1000/1200 | 450/100 | 1000 | 900 | 8500 | 2200 |
Hole mobility μh | 600 | 120 | 100 | 50 | 150 | 400 | 1600 | |
Electric breakdown field Ec |
V/cm | 3.0×105 | 2.8×106 | 3.0×106 | 1.5×106 | 3.3×106 | 4.0×105 | 1.0×107 |
Thermal conductivity λ | W/cmK | 1.5 | 4.9 | 4.9 | 4.9 | 2.0 | 0.5 | 20 |
Saturated electron drift velocity Vsat |
cm/s | 1.0×107 | 2.2×107 | 1.9×107 | 2.7×107 | 2.7x107 | 2.0×107 | 2.7×107 |
Relative dielectric constant ε |
11.8 | 9.7/10.2 | 9.7/10.2 | 9.7 | 9.0 | 12.8 | 5.5 |