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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
The dv/dt of the MOSFET is the changing rate of the drain-source voltage during the switching transient.
If dv/dt is too large, ringing may occur, possibly leading to MOSFET damage.
Therefore, dv/dt ruggedness values are specified for some MOSFETs.
For MOSFET’s ringing, please refer to “Parasitic Oscillation and Ringing of Power MOSFETs:Power MOSFET Application Notes.”