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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
Compact size and low-on-resistance Toshiba’s MOSFET achieves low-RON characteristics over a wide range of driving voltages from 1.2V to 10V using outstanding trench processing technologies. In particular, the latest-generation Pch process (U-MOSⅦ) succeeds in reducing Ron which is important figure of MOSFETs by approximately 70% compared to the old-generation process.
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