TK3R1E04PL

Power MOSFET (N-ch single 30V<VDSS≤60V)

全部 Data sheet 應用說明 Other

數據表

TK3R1E04PL 數據表/日文[Jan,2021]PDF: 608KB

數據表

TK3R1E04PL 數據表/英文[Jan,2021]PDF: 503KB

Simulation Model

PSpice Model[Dec,2020]lib: 3KB

Simulation Model

LTspice Model[Mar,2021]ZIP: 11KB

Simulation Model

SIMetrix Model[Apr,2025]ZIP: 9KB

Thermal Simulation Model

Simplified CFD Model[Aug,2024]ZIP: 11KB

Reliability Information

Reliability Data[Oct,2024]PDF: 203KB

Application Note

MOSFET SPICE model grade[May,2023]PDF: 1639KB

Application Note

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

Application Note

Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

Application Note

Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter[Sep,2021]PDF: 2324KB

Application Note

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

Application Note

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

Application Note

Avalanche energy calculation[Mar,2020]PDF: 562KB

Application Note

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

Application Note

Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

Application Note

Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes[Nov,2019]PDF: 1061KB

Application Note

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

Application Note

Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

Application Note

Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

Application Note

MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

Application Note

RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

Application Note

Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

Application Note

Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

Application Note

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

Application Note

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

Application Note

Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

Application Note

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

Application Note

MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

Application Note

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

Application Note

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

Application Note

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

Application Note

Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

Application Note

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

Application Note

MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

Application Note

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

Application Note

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Catalog

Selection Guide MOSFETs 2025 Rev1.0[Feb,2025]PDF: 3497KB

數據表

TK3R1E04PL 數據表/日文[Jan,2021]PDF: 608KB

數據表

TK3R1E04PL 數據表/英文[Jan,2021]PDF: 503KB

Application Note

MOSFET SPICE model grade[May,2023]PDF: 1639KB

Application Note

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

Application Note

Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

Application Note

Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter[Sep,2021]PDF: 2324KB

Application Note

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

Application Note

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

Application Note

Avalanche energy calculation[Mar,2020]PDF: 562KB

Application Note

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

Application Note

Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

Application Note

Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes[Nov,2019]PDF: 1061KB

Application Note

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

Application Note

Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

Application Note

Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

Application Note

MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

Application Note

RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

Application Note

Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

Application Note

Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

Application Note

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

Application Note

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

Application Note

Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

Application Note

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

Application Note

MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

Application Note

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

Application Note

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

Application Note

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

Application Note

Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

Application Note

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

Application Note

MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

Application Note

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

Application Note

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Simulation Model

PSpice Model[Dec,2020]lib: 3KB

Simulation Model

LTspice Model[Mar,2021]ZIP: 11KB

Simulation Model

SIMetrix Model[Apr,2025]ZIP: 9KB

Thermal Simulation Model

Simplified CFD Model[Aug,2024]ZIP: 11KB

Reliability Information

Reliability Data[Oct,2024]PDF: 203KB

Catalog

Selection Guide MOSFETs 2025 Rev1.0[Feb,2025]PDF: 3497KB

產品概要

Application Scope	High-Efficiency DC-DC Converters / Switching Voltage Regulators / Motor Drivers
Polarity	N-ch
Generation	U-MOSⅨ-H
Internal Connection	Single
RoHS Compatible Product(s) (#)	Available

包裝資訊

Toshiba Package Name	TO-220
Package Image
Pins	3
Mounting	Through Hole
Width×Length×Height (mm)	10.16×15.1×4.45
Package Dimensions	檢視
Ultra Librarian^® CAD model (Symbol, Footprint and 3D model)	Download from UltraLibrarian^® in your desired CAD format (Note1)(Note3)
SamacSys CAD model (Symbol, Footprint and 3D model)	Download from SamacSys (Note2)(Note3)

Please refer to the link destination to check the detailed size.

(Note1)	Ultra Librarian^® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian^®. The footprints are generated based on the specifications of Ultra Librarian^®.
(Note2)	SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys.
(Note3)	Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

絕對最大額定值

項目	符號	值	單位
Drain-Source voltage	V_DSS	40	V
Gate-Source voltage	V_GSS	+/-20	V
Drain current	I_D	128	A
Power Dissipation	P_D	87	W

電器特性

項目	符號	條件	值	單位
Gate threshold voltage (Max)	V_th	-	2.4	V
Gate threshold voltage (Min)	V_th	-	1.4	V
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=4.5V	3.8	mΩ
Drain-Source on-resistance (Max)	R_DS(ON)	\|V_GS\|=10V	3.1	mΩ
Input capacitance (Typ.)	C_iss	-	4670	pF
Total gate charge (Typ.)	Q_g	V_GS=10V	63.4	nC
Output charge (Typ.)	Q_oss	-	42	nC
Reverse recovery time (Typ.)	t_rr	-	50	ns
Reverse recovery charge (Typ.)	Q_rr	-	50	nC

Orderable part number

Orderable part number (example)	MOQ(pcs)	Reliability Information	RoHS
TK3R1E04PL,S1X	50		Yes

Notes

The Part Number column shows representative part numbers only, which may not be available for sale in the precise form shown. Each Part Number constitutes a product family which may contain multiple associated product configurations.
(#) Under the RoHS Compatible Product(s) column, "Available" means at least one RoHS-Compatible product is available for sale in the corresponding product family. "None" means no RoHS Compatible product is available in that product family. For Toshiba's definitions of concepts related to the RoHS Directive and RoHS Compatibility, please click here.
The RoHS compatibility information provided herein is to the best of Toshiba's knowledge and belief accurate as of the date Toshiba entered the information into this database. Information is subject to change at any time without notice.
Please contact your Toshiba sales representative for detailed environmental information about each specific part number or product, such as RoHS compatibility or material content. Please use Toshiba products only in compliance with all applicable laws and regulations concerning the inclusion or use of controlled substances, including without limitation the RoHS Directive.TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
Reliability data are provided for your reference only, please contact your Toshiba sales representative for detailed reliability information about each part number.
For product delivery, additional characters will be added to the part numbers shown on this website. For details, please ask your local distributor, or send an inquiry accessed from "Contact Us" on this website.

(Note1)	LTspice ^® is a trademark and simulation software of ADI (Analog Devices, Inc.).
(Note2)	SIMetrix^® is simulation software and registered trademarks of SIMetrix Technologies Ltd.

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TK3R1E04PL

產品概要

包裝資訊

絕對最大額定值

電器特性

文檔

Orderable part number

技術方面問題

相關信息

Notes