Power MOSFET (N-ch single 30V<VDSS≤60V)
Application Scope | Switching Voltage Regulators |
---|---|
Polarity | N-ch |
Generation | U-MOSⅧ-H |
Internal Connection | Single |
RoHS Compatible Product(s) (#) | Available |
本產品為量產產品,新設計中還推薦使用以下新產品
器件型號 | 兼容性 | 備註 |
---|---|---|
TK8R2A06PL | Package and characteristics are almost same | Almost same ON resistance |
Toshiba Package Name | TO-220SIS |
---|---|
Package Image | |
JEITA | SC-67 |
Pins | 3 |
Mounting | Through Hole |
Width×Length×Height (mm) |
10.0×15.0×4.5 |
Package Dimensions | 檢視 |
CAD data (Symbol, Footprint and 3D model) |
Download from UltraLibrarian® in your desired CAD format (Note) |
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項目 | 符號 | 值 | 單位 |
---|---|---|---|
Drain-Source voltage | VDSS | 60 | V |
Gate-Source voltage | VGSS | +/-20 | V |
Drain current | ID | 60 | A |
Power Dissipation | PD | 30 | W |
項目 | 符號 | 條件 | 值 | 單位 |
---|---|---|---|---|
Gate threshold voltage (Max) | Vth | - | 4.0 | V |
Gate threshold voltage (Min) | Vth | - | 2.0 | V |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=10V | 10.4 | mΩ |
Input capacitance (Typ.) | Ciss | - | 1700 | pF |
Total gate charge (Typ.) | Qg | VGS=10V | 23 | nC |
Reverse recovery time (Typ.) | trr | - | 46 | ns |
Reverse recovery charge (Typ.) | Qrr | - | 62 | nC |