Power MOSFET (N-ch single 60V<VDSS≤150V)
Application Scope | Switching Voltage Regulators |
---|---|
Polarity | N-ch |
Generation | U-MOSⅧ-H |
Internal Connection | Single |
RoHS Compatible Product(s) (#) | Available |
Toshiba Package Name | TO-220SIS |
---|---|
Package Image | |
JEITA | SC-67 |
Pins | 3 |
Mounting | Through Hole |
Width×Length×Height (mm) |
10.0×15.0×4.5 |
Package Dimensions | 檢視 |
CAD data (Symbol, Footprint and 3D model) |
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項目 | 符號 | 值 | 單位 |
---|---|---|---|
Drain-Source voltage | VDSS | 120 | V |
Gate-Source voltage | VGSS | +/-20 | V |
Drain current | ID | 88 | A |
Power Dissipation | PD | 35 | W |
項目 | 符號 | 條件 | 值 | 單位 |
---|---|---|---|---|
Gate threshold voltage (Max) | Vth | - | 4.0 | V |
Gate threshold voltage (Min) | Vth | - | 2.0 | V |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=10V | 9.4 | mΩ |
Input capacitance (Typ.) | Ciss | - | 3100 | pF |
Total gate charge (Typ.) | Qg | VGS=10V | 52 | nC |
Reverse recovery time (Typ.) | trr | - | 80 | ns |
Reverse recovery charge (Typ.) | Qrr | - | 190 | nC |