TPN12008QM

Power MOSFET (N-ch single 60V<VDSS≤150V)

產品概要

Application Scope High-Efficiency DC-DC Converters / Switching Voltage Regulators / Motor Drivers
Polarity N-ch
Generation U-MOSⅩ-H
Internal Connection Single
RoHS Compatible Product(s) (#) Available

包裝資訊

Toshiba Package Name TSON Advance
Package Image TSON Advance
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)
3.3×3.3×0.85
Package Dimensions 檢視
Land pattern dimensions 檢視

 Please refer to the link destination to check the detailed size.

絕對最大額定值

項目 符號 單位
Drain-Source voltage VDSS 80 V
Gate-Source voltage VGSS 20 V
Drain current ID 26 A
Power Dissipation PD 86 W

電器特性

項目 符號 條件 單位
Gate threshold voltage (Max) Vth - 3.5 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=6V 17.7
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 12.3
Input capacitance (Typ.) Ciss - 1280 pF
Total gate charge (Typ.) Qg VGS=10V 22 nC
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Jul,2023

Aug,2023

Aug,2023

Sep,2022

Dec,2023

(Note1)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

(Note2)

SIMetrix® is simulation software and registered trademarks of SIMetrix Technologies Ltd.

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