TPN2R503NC

停產產品

Power MOSFET (N-ch single VDSS≤30V)

產品概要

Application Scope Power Management Switches
Polarity N-ch
Generation U-MOSⅧ
Internal Connection Single
RoHS Compatible Product(s) (#) Please contact us.

包裝資訊

Toshiba Package Name TSON Advance
Package Image 東芝 TPN2R503NC Power MOSFET (N-ch single VDSS≤30V)產品 TSON Advance 封裝圖片
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)
3.1×3.3×0.85
Package Dimensions 檢視
Land pattern dimensions 檢視

 Please refer to the link destination to check the detailed size.

絕對最大額定值

項目 符號 單位
Drain-Source voltage VDSS 30 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 85 A
Power Dissipation PD 35 W

電器特性

項目 符號 條件 單位
Gate threshold voltage (Max) Vth - 2.3 V
Gate threshold voltage (Min) Vth - 1.3 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 4.1
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 2.5
Input capacitance (Typ.) Ciss - 2230 pF
Total gate charge (Typ.) Qg VGS=10V 40 nC

文檔

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May,2016

Feb,2019

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

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