TK065N65Z

Power MOSFET (N-ch 500V<VDSS≤700V)

  • 相關參考設計(1)

數據表

TK065N65Z 數據表/日文[Nov,2018]PDF: 525KB

數據表

TK065N65Z 數據表/英文[Nov,2018]PDF: 414KB

Simulation Model

PSpice Model[Jan,2023]ZIP: 45KB

Simulation Model

LTspice Model[Jan,2023]ZIP: 53KB

Simulation Model

SIMetrix Model[May,2025]ZIP: 10KB

Thermal Simulation Model

Simplified CFD Model[Oct,2023]ZIP: 10KB

Reliability Information

Reliability Data[Jan,2025]PDF: 201KB

Environment Information

Certificate Regarding EU RoHS(2011/65/EU)Controlled Substances[May,2025]PDF: 86KB

Environment Information

Certificate on Content of SVHC of REACH[May,2025]PDF: 86KB

Application Note

MOSFET SPICE model grade[May,2023]PDF: 1639KB

Application Note

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

Application Note

Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

Application Note

Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter[Sep,2021]PDF: 2324KB

Application Note

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

Application Note

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

Application Note

Avalanche energy calculation[Mar,2020]PDF: 562KB

Application Note

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

Application Note

Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

Application Note

Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes[Nov,2019]PDF: 1061KB

Application Note

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

Application Note

Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

Application Note

Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

Application Note

MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

Application Note

RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

Application Note

Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

Application Note

Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

Application Note

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

Application Note

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

Application Note

Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

Application Note

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

Application Note

MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

Application Note

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

Application Note

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

Application Note

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

Application Note

Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

Application Note

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

Application Note

MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

Application Note

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

Application Note

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Catalog

Selection Guide MOSFETs 2025 Rev1.0[Feb,2025]PDF: 3497KB

數據表

TK065N65Z 數據表/日文[Nov,2018]PDF: 525KB

數據表

TK065N65Z 數據表/英文[Nov,2018]PDF: 414KB

Application Note

MOSFET SPICE model grade[May,2023]PDF: 1639KB

Application Note

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

Application Note

Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

Application Note

Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter[Sep,2021]PDF: 2324KB

Application Note

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

Application Note

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

Application Note

Avalanche energy calculation[Mar,2020]PDF: 562KB

Application Note

Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

Application Note

Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

Application Note

Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes[Nov,2019]PDF: 1061KB

Application Note

U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

Application Note

Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

Application Note

Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

Application Note

MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

Application Note

RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

Application Note

Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

Application Note

Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

Application Note

Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

Application Note

Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

Application Note

Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

Application Note

Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

Application Note

MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

Application Note

Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

Application Note

MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

Application Note

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

Application Note

Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

Application Note

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

Application Note

MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

Application Note

Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

Application Note

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Simulation Model

PSpice Model[Jan,2023]ZIP: 45KB

Simulation Model

LTspice Model[Jan,2023]ZIP: 53KB

Simulation Model

SIMetrix Model[May,2025]ZIP: 10KB

Thermal Simulation Model

Simplified CFD Model[Oct,2023]ZIP: 10KB

Reliability Information

Reliability Data[Jan,2025]PDF: 201KB

Environment Information

Certificate Regarding EU RoHS(2011/65/EU)Controlled Substances[May,2025]PDF: 86KB

Environment Information

Certificate on Content of SVHC of REACH[May,2025]PDF: 86KB

Catalog

Selection Guide MOSFETs 2025 Rev1.0[Feb,2025]PDF: 3497KB

產品概要

Application Scope Switching Voltage Regulators
Polarity N-ch
Generation DTMOSⅥ
Internal Connection Single
RoHS Compatible Product(s) (#) Available

包裝資訊

Toshiba Package Name TO-247
Package Image TO-247
Pins 3
Mounting Through Hole
Width×Length×Height
(mm)		 15.94×20.95×5.02
Package Dimensions 檢視
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)		 Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>(Note1)(Note3)

Download from UltraLibrarian® in your desired CAD format
(Note1)(Note3)
SamacSys CAD model
(Symbol, Footprint and 3D model)		 Download from SamacSys<br>(Note2)(Note3)

Download from SamacSys
(Note2)(Note3)

 Please refer to the link destination to check the detailed size.

(Note1)

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

(Note2)

SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys.

(Note3)

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

絕對最大額定值

項目 符號 值 單位
Drain-Source voltage VDSS 650 V
Gate-Source voltage VGSS +/-30 V
Drain current ID 38 A
Power Dissipation PD 270 W

電器特性

項目 符號 條件 值 單位
Gate threshold voltage (Max) Vth - 4.0 V
Gate threshold voltage (Min) Vth - 3.0 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 65 mΩ
Input capacitance (Typ.) Ciss - 3650 pF
Total gate charge (Typ.) Qg VGS=10V 62 nC
Reverse recovery time (Typ.) trr - 350 ns
Reverse recovery charge (Typ.) Qrr - 6000 nC
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文檔

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Jan,2023

Jan,2023

May,2025

Oct,2023

Jan,2025

May,2025

May,2025

(Note1)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

(Note2)

SIMetrix® is simulation software and registered trademarks of SIMetrix Technologies Ltd.

Orderable part number

Orderable part number
(example)		 MOQ(pcs) Reliability
Information		 RoHS
TK065N65Z,S1F 30 Yes

參考設計

This is a picture of the Vienna rectifier circuit PFC power supply that supports 3-phase AC 400V input.
3相AC 400 V輸入Vienna整流器PFC電源
工業設備等3相400V(線電壓)交流電源系統在日本以外廣泛被使用。當電動車的充電椿和其他設備使用3相AC 400 V交流電源時，將交流整流為直流的高功率因數PFC（功率因數校正）是不可缺少的。 此設計為PFC電源，輸入3相AC 400 V，輸出DC 750 V。採用Vienna整流器拓撲，實現3-level的轉換高效率，功率可達5 kW。 提供電路各部分的設計技巧、操作方法以及電路圖和PCB等設計資訊，提供您於設計中使用。
詳細資料

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常見問題

常見問答

Notes

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