3-5. Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is currently attracting the most attention among transistors.
There are two types of MOSFET: N channel (See Fig.3-4(a) Nch below) and P channel (See Fig.3-4(b) Pch below).
Nch is widely used for AC/DC power supplies, DC/DC converters, inverter equipment, etc., whereas Pch is used for load switches, high-side switches, etc.
The differences between the bipolar transistor and the MOSFET are shown in Table 3-1.

Symbol and operation of N-channel MOSFET
Fig. 3-4(a) Symbol and operation of N-channel MOSFET
Symbol and operation of P-channel MOSFET
Fig. 3-4(b) Symbol and operation of P-channel MOSFET
BJT(Current-driven device) MOSFET(Voltage-driven device)
  • Low input impedance
  • Large reverse transfer capacitance
  • Narrow safe operating region
  • Enables low-voltage operation (On voltage is 0.6-0.7 V)
  • High input impedance
  • Small reverse transfer capacitance
  • Wide safe operating region
  • Low gate  power consumption
  • Easy driving

Table 3-1 Comparison of BJT and MOSFET

Chapter III : Transistors

3-1. Types of Transistors
3-2. Bipolar Transistors (BJTs)
3-3. Bias Resistor Built-in Transistors (BRTs)
3-4. Junction Field-Effect Transistors (JFETs)
3-6. Differences between BJT and MOSFET
3-7. Structure and Operation of MOSFET
3-8. MOSFET Performance Improvement: Decision Factors of RDS(ON)
3-9. MOSFET Performance Improvement: Approach to Low RDS(ON)
3-10. MOSFET Performance Improvement: Super-Junction MOSFETs (SJ-MOS)
3-11. Summary of MOSFET Features by Structure
3-12. Performance of MOSFETs: Drain Current and Power Dissipation
3-13. Performance of MOSFETs: Avalanche Capability
3-14. Performance of MOSFETs: Characteristic of Capacitance
3-15. Performance of MOSFETs: Safe Operating Area(or Area of Safe Operation)
3-16. Insulated-Gate Bipolar Transistors (IGBTs)
3-17. Operation of Insulated-Gate Bipolar Transistors (IGBTs)
3-18. Performance Improvement of IGBTs: Evolution of Vertical Design
3-19. What are RC-IGBTs and IEGTs?
3-20. Application of IGBTs
3-21. Comparison of Forward Characteristics of IGBTs and MOSFETs
3-22. Comparison of Transistors by Structure
3-23. Datasheets of MOSFET: Maximum Ratings
3-24. Datasheets of MOSFET: Electrical Characteristics
3-25. Datasheets of MOSFET: Capacitance and Switching Characteristics
3-26. Datasheets of MOSFET: Body Diode

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