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3-11. Summary of MOSFET Features by Structure

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Features and main applications based on the structure of various MOSFETs are shown in Table 3-2.

Withstand voltage: The optimum structure is selected for the target withstand voltage.
Low On-Resistance: U-MOS for products with 250 V or less, SJ-MOS (or DTMOS) are advantageous for products with more than that.
High current: The same tendency as for low ON resistance.
High Speed: U-MOS is disadvantageous for high-speed switching because of large gate capacity (Ciss).

Depending on the product, it is also commercialized for high-speed switching designed for small "Ron × Ciss” by taking advantage of the low ON resistance characteristic.

Table 3-2. Advantages and applications of MOSFETs by structure
Names at Toshiba		U-MOS	π-MOS	DTMOS
General name		Trench gate MOS	D-MOS Planer gate MOS	SJ-MOS
Withstand voltage		Better up to 250 V	Excellent up to 900 V	Excellent 600 V or higher
Low ON voltage		Excellent	Fair	Excellent
High current		Excellent	Fair	Excellent
High speed		Good/Excellent	Good	Excellent
Application	Field	Battery applications	Small-to medium-capacity converters	Medium-to large-capacity converters
Application	Equipment	PCM,NBPC,DC/DC converters,motor equipment for automobiles	Chargers,adaptors small-to medium-size TVs, LED lighting	Base station & server power supplies, medium-to large-size TVs, power conditioners