Summary of MOSFET Features by Structure
Download "Chapter III : Transistors" (PDF:2.0MB)
Features and main applications based on the structure of various MOSFETs are shown in Table 3-2.
- Withstand voltage: The optimum structure is selected for the target withstand voltage.
- Low On-Resistance: U-MOS for products with 250 V or less, SJ-MOS (or DTMOS) are advantageous for products with more than that.
- High current: The same tendency as for low ON resistance.
- High Speed: U-MOS is disadvantageous for high-speed switching because of large gate capacity (Ciss).
Depending on the product, it is also commercialized for high-speed switching designed for small "Ron × Ciss” by taking advantage of the low ON resistance characteristic.
| Names at Toshiba | U-MOS | π-MOS | DTMOS | |
|---|---|---|---|---|
| General name | Trench gate MOS | D-MOS Planer gate MOS |
SJ-MOS | |
| Withstand voltage | Better up to 250 V | Excellent up to 900 V | Excellent 600 V or higher | |
| Low ON voltage | Excellent | Fair | Excellent | |
| High current | Excellent | Fair | Excellent | |
| High speed | Good/Excellent |
Good | Excellent | |
| Application | Field | Battery applications | Small-to medium-capacity converters | Medium-to large-capacity converters |
| Equipment | PCM,NBPC,DC/DC converters,motor equipment for automobiles | Chargers,adaptors small-to medium-size TVs, LED lighting | Base station & server power supplies, medium-to large-size TVs, power conditioners | |
Chapter III : Transistors
Types of Transistors
Bipolar Transistors (BJTs)
Bias Resistor Built-in Transistors (BRTs)
Junction Field-Effect Transistors (JFETs)
Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)
Differences between BJT and MOSFET
Structure and Operation of MOSFET
MOSFET Performance Improvement: Decision Factors of RDS(ON)
MOSFET Performance Improvement: Approach to Low RDS(ON)
MOSFET Performance Improvement: Super-Junction MOSFETs (SJ-MOS)
Performance of MOSFETs: Drain Current and Power Dissipation
Performance of MOSFETs: Avalanche Capability
Performance of MOSFETs: Characteristic of Capacitance
Performance of MOSFETs: Safe Operating Area(or Area of Safe Operation)
Insulated-Gate Bipolar Transistors (IGBTs)
Operation of Insulated-Gate Bipolar Transistors (IGBTs)
Performance Improvement of IGBTs: Evolution of Vertical Design
What are RC-IGBTs and IEGTs?
Application of IGBTs
Comparison of Forward Characteristics of IGBTs and MOSFETs
Comparison of Transistors by Structure
Datasheets of MOSFET: Maximum Ratings
Datasheets of MOSFET: Electrical Characteristics
Datasheets of MOSFET: Capacitance and Switching Characteristics
Datasheets of MOSFET: Body Diode
Related information
- Products
- Application Notes
- FAQ
A new window will open