3-6. Differences between BJT and MOSFET

Explanation of the differences between ON/OFF operation of BJT and MOSFET.

(1) Base current of BJT starts flowing when base voltage increases, and collector current is in proportion to this base current. This flow starts at about 0.7 V. This voltage is called the base-emitter threshold voltage (VBE). In order to make collector current flow, it is necessary to supply the base current and continuous driving power is required. (Low drive voltage, continuous driving power required)
(2) Since the MOSFET forms a channel according to the gate-source voltage, this voltage must be a certain voltage or more. Once the channel is formed, the ON state continues and the drain current continues to flow, and so the power required for the driving is small. By discharging the charge accumulated in the gate and removing the channel, it shifts to the OFF state. (Driving voltage higher than BJT, small driving power)

Switching operation of BJT
Fig. 3-5(a) Switching operation of BJT
Switching operation of MOSFET
Fig. 3-5(b) Switching operation of MOSFET

Chapter III : Transistors

3-1. Types of Transistors
3-2. Bipolar Transistors (BJTs)
3-3. Bias Resistor Built-in Transistors (BRTs)
3-4. Junction Field-Effect Transistors (JFETs)
3-5. Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)
3-7. Structure and Operation of MOSFET
3-8. MOSFET Performance Improvement: Decision Factors of RDS(ON)
3-9. MOSFET Performance Improvement: Approach to Low RDS(ON)
3-10. MOSFET Performance Improvement: Super-Junction MOSFETs (SJ-MOS)
3-11. Summary of MOSFET Features by Structure
3-12. Performance of MOSFETs: Drain Current and Power Dissipation
3-13. Performance of MOSFETs: Avalanche Capability
3-14. Performance of MOSFETs: Characteristic of Capacitance
3-15. Performance of MOSFETs: Safe Operating Area(or Area of Safe Operation)
3-16. Insulated-Gate Bipolar Transistors (IGBTs)
3-17. Operation of Insulated-Gate Bipolar Transistors (IGBTs)
3-18. Performance Improvement of IGBTs: Evolution of Vertical Design
3-19. What are RC-IGBTs and IEGTs?
3-20. Application of IGBTs
3-21. Comparison of Forward Characteristics of IGBTs and MOSFETs
3-22. Comparison of Transistors by Structure
3-23. Datasheets of MOSFET: Maximum Ratings
3-24. Datasheets of MOSFET: Electrical Characteristics
3-25. Datasheets of MOSFET: Capacitance and Switching Characteristics
3-26. Datasheets of MOSFET: Body Diode

Related information

A new window will open