3-26. Datasheets of MOSFET: Body Diode

<Electrical characteristics>

  • Continuous drain reverse current (IDR)
    Forward current of drain-source diode with DC
  • Pulse drain reverse current (IDRP)
    Forward current of drain-source diode with pulse
  • Forward voltage (diode) (VDSF)
    Voltage dropdown of drain-source diode  with forward current
  • Reverse recovery time (trr)
    Reverse recovery time of drain-source diode under designated condition
  • Reverse recovery charge (Qrr)
    Reverse recovery charge of drain-source diode under designated condition
Datasheets of MOSFET: Body Diode

Chapter III : Transistors

3-1. Types of Transistors
3-2. Bipolar Transistors (BJTs)
3-3. Bias Resistor Built-in Transistors (BRTs)
3-4. Junction Field-Effect Transistors (JFETs)
3-5. Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)
3-6. Differences between BJT and MOSFET
3-7. Structure and Operation of MOSFET
3-8. MOSFET Performance Improvement: Decision Factors of RDS(ON)
3-9. MOSFET Performance Improvement: Approach to Low RDS(ON)
3-10. MOSFET Performance Improvement: Super-Junction MOSFETs (SJ-MOS)
3-11. Summary of MOSFET Features by Structure
3-12. Performance of MOSFETs: Drain Current and Power Dissipation
3-13. Performance of MOSFETs: Avalanche Capability
3-14. Performance of MOSFETs: Characteristic of Capacitance
3-15. Performance of MOSFETs: Safe Operating Area(or Area of Safe Operation)
3-16. Insulated-Gate Bipolar Transistors (IGBTs)
3-17. Operation of Insulated-Gate Bipolar Transistors (IGBTs)
3-18. Performance Improvement of IGBTs: Evolution of Vertical Design
3-19. What are RC-IGBTs and IEGTs?
3-20. Application of IGBTs
3-21. Comparison of Forward Characteristics of IGBTs and MOSFETs
3-22. Comparison of Transistors by Structure
3-23. Datasheets of MOSFET: Maximum Ratings
3-24. Datasheets of MOSFET: Electrical Characteristics
3-25. Datasheets of MOSFET: Capacitance and Switching Characteristics

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