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3-9. MOSFET Performance Improvement: Approach to Low RDS(ON)
Download "Chapter III : Transistors" (PDF:2.0MB)
We are pursuing the following countermeasures for the biggest problem of MOSFET: ”How to effectively reduce on-resistance by effectively utilizing the element area“
(1) High voltage: Reduce resistance of Rdrift by the advanced super-junction process explained on the next page.
(2) Low voltage: Minimize resistance of Rch by fine patterning of trench structure and reduce resistance of Rsub by thinning wafer
Chapter III : Transistors
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