300W Isolated DC-DC Converter(Upgraded)

This design supports a wide input voltage range of DC 36 to 75V and provides a DC 12V output with a power capacity of 300W. Thanks to replacement of Toshiba latest MOSFET and digital isolator, and circuit optimization, it achieves higher efficiency at whole load condition compared with the existing reference design with the same topology.
We provide design information including key circuit design points, usage instructions, adjustment methods for each section, circuit diagrams, and PCB layout data to support your development.

Board Appearance
Board Appearance
TPN1200APL TPN1200APL TPN1200APL TPN1200APL TPN1200APL TPH2R70AR5 TPH2R70AR5 TPH2R70AR5 DCL520C00 DCL520C00

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特性

  • Equipped with Toshiba latest generation devices and circuit optimization achieve higher efficiency than the existing design.
  • Wide input voltage range of 36 to 75V and can be applied to 48V systems.
  • Conversion efficiency: 94.6% (at Vin = 48V, 100% Load)
  • Outline size: 82mm x 82mm x 24mm
  • The use of a wound structure transformer facilitates deployment in real world applications.

說明

Input voltage DC 36 to 75V
Output voltage DC 12V
Output power 300W
Circuit topology Phase Shift Full Bridge
Efficiency Curves
Efficiency Curves

設計文件

供設計人員使用的材料，例如電路操作概述和設計注意事項的解釋。請點擊每個選項以查看內容。

設計數據

提供可載入到EDA工具中的電路資料、PCB佈局資料以及PCB製造中使用的資料。來自多個工具供應商的可用格式。您可以使用喜歡的工具來自由的編輯它。

*1:Actual PCB was designed on CR8000BD. The other files were made from CR8000BD file.

*2:The data was generated on CR8000BD.

使用東芝項目/產品

器件型號 器件目錄 使用部位・數量 說明
Power MOSFET (N-ch single 60V<VDSS≤150V) Primary-side･4 N-ch MOSFET, 100 V, 0.0115 Ω@10V, TSON Advance, U-MOSⅨ-H
Power MOSFET (N-ch single 60V<VDSS≤150V) Secondary-side･4 N-ch MOSFET, 100 V, 0.0027 Ω@10V, Qrr=55nC@100A/μs, SOP Advance(N), U-MOS11-H
Standard Digital Isolators Communication between primary-side and secondary-side･1 HIGH SPEED DIGITAL ISOLATORS, High-speed, 150 Mbps, 3000 Vrms, 8pin SOIC Narrow body

相關文件

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