Full SiC MOSFET 10kW Isolated Bidirectional DC-DC Converter

A reference design for a 10kW isolated bidirectional DC-DC converter employing a Dual Active Bridge (DAB) topology and SiC MOSFETs on both the high-voltage and low-voltage sides.
It provides detailed information including key design points for each circuit block, usage instructions, and adjustment methods, as well as schematic diagrams and PCB layout data, helping support your power electronics designs.

Board Appearance
Board Appearance
TW060N120C TW060N120C TW060N120C TW060N120C TW048N65C TW048N65C TW048N65C TW048N65C TW060N120C TW048N65C TLP7920 TLP5214A

Click on components for more details

特性

  • Efficiency: 97.6% (Vin = 750V, 100% load)
  • Topology: Dual Active Bridge (DAB)
  • Dimensions: 565mm × 360mm × 270mm
  • Proposes a total solution combining SiC MOSFETs, smart gate driver couplers, and isolation amplifiers
  • Equipped with our latest-generation SiC MOSFETs
Efficiency Curve
Efficiency Curve

設計文件

供設計人員使用的材料，例如電路操作概述和設計注意事項的解釋。請點擊每個選項以查看內容。

設計數據

提供可載入到EDA工具中的電路資料、PCB佈局資料以及PCB製造中使用的資料。來自多個工具供應商的可用格式。您可以使用喜歡的工具來自由的編輯它。

使用東芝項目/產品

器件型號 器件目錄 使用部位・數量 說明
Power SiC MOSFETs High-voltage side switch・4 N-ch SiC MOSFET, 1200 V, 0.060 Ω(typ.)@18V, TO-247, 3rd Gen.
Power SiC MOSFETs Low-voltage side switch・4 N-ch SiC MOSFET, 650 V, 0.048 Ω(typ.)@18V, TO-247, 3rd Gen.
Photocoupler (photo-IC output) Gate drive・8 Photocoupler (photo-IC output), IGBT driver, IOP=+/-4.0 A, 5000 Vrms, SO16L
Photocoupler(Isolation Amplifier) Voltage detection・2 Photocoupler(Isolation Amplifier), Analog output, 5000 Vrms, DIP8

相關文件

我們提供有助於設計和考慮類似電路的材料，例如已安裝產品的應用說明。請點擊每個選項以查看內容。

聯繫我們

技術方面問題

聯絡我們

聯絡我們

常見問題

常見問答
Membership registration required
開啟新視窗