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包裝資訊

Toshiba Package Name	DFN 8×8
Package Image
Pins	5
Mounting	Surface Mount
Width×Length×Height (mm)	8.0×8.0×0.85
Package Dimensions	檢視
Land pattern dimensions	檢視
SamacSys CAD model (Symbol, Footprint and 3D model)	Download from SamacSys (Note1)(Note2)

Please refer to the link destination to check the detailed size.

(Note1)	SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys.
(Note2)	Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

絕對最大額定值

項目	符號	值	單位
Drain-Source voltage	V_DSS	650	V
Gate-Source voltage	V_GSS	+25/-10	V
Drain current	I_D	27	A
Power Dissipation	P_D	111	W

電器特性

項目	符號	條件	值	單位
Gate threshold voltage (Max)	V_th	-	5.0	V
Gate threshold voltage (Min)	V_th	-	3.0	V
Drain-Source on-resistance (Typ.)	R_DS(ON)	\|V_GS\|=18V	92	mΩ
Input capacitance (Typ.)	C_iss	-	873	pF
Total gate charge (Typ.)	Q_g	-	28	nC

文檔

全部選擇
如果沒看到確認框則對應文件目前無法下載

數據表 TW092V65C 數據表/日文

PDF: 902KB

Feb,2025

數據表 TW092V65C 數據表/英文

PDF: 826KB

Feb,2025

Simulation Model PSpice Model ZIP

ZIP: 45KB

Jun,2025

Simulation Model LTspice Model (Note) ZIP

ZIP: 50KB

Jun,2025

Thermal Simulation Model Simplified CFD Model ZIP

ZIP: 9KB

Jun,2025

Application Note Features of third generation SiC MOSFET

PDF: 1316KB

Jun,2023

Application Note MOSFET SPICE model grade

PDF: 1639KB

May,2023

Application Note FAQ: SiC MOSFET Application Notes

PDF: 801KB

Mar,2021

Application Note Comparison of SiC MOSFET and Si IGBT: SiCMOSFET Application Notes

PDF: 907KB

Aug,2020

Application Note Absolute Maximum Ratings and Electrical Characteristics: SiCMOSFET Application Notes

PDF: 792KB

Aug,2020

UPDATED Catalog Selection Guide MOSFETs 2025 Rev1.1

PDF: 3987KB

Sep,2025

(Note)

LTspice ^® is a trademark and simulation software of ADI (Analog Devices, Inc.).

參考設計

3kW Power Supply for Servers and Telecoms Using Surface-Mounted SiC MOSFET

In recent years, data centers have been growing larger and becoming more densely packed. As a result, power supplies for servers are now required to be more efficient, more powerful, and more space-saving, making high power density essential. By adopting our latest surface-mounted SiC devices, we have achieved high power density by separating the power supply from the main board and implementing it as a sub-board.
In addition to server applications, this solution can also be applied to telecom systems and other applications that use 48V.
This reference design provides explanations of the design points, usage methods, and adjustment methods of each part of the circuit, as well as design information including circuit diagrams, board patterns, etc. which can be useful for your design.

詳細資料

3kW Power Supply for AI Servers Using Surface-Mounted SiC MOSFET

With the rapid rise of generative AI, demand for high-performance AI servers is growing. This reference design provides a 3kW power supply for AI servers with high power requirements. By incorporating our surface-mount SiC MOSFETs, it achieves high power density.
Design tips on each portion of the circuit, method of operation, and design information such as circuit diagrams and PCB patterns are available, please use them for your design.

詳細資料

3kW Power Supply for Electric Scooter Fast Chargers Using SiC MOSFET

In recent years, the growing focus on carbon neutrality has led to increased popularity of electric scooters, driving demand for fast battery charging. This reference design presents a 3kW power supply tailored for fast chargers used with electric scooters.
Design tips on each portion of the circuit, method of operation, and design information such as circuit diagrams and PCB patterns are available, please use them for your design.

詳細資料

Notes

The Part Number column shows representative part numbers only, which may not be available for sale in the precise form shown. Each Part Number constitutes a product family which may contain multiple associated product configurations.
(#) Under the RoHS Compatible Product(s) column, "Available" means at least one RoHS-Compatible product is available for sale in the corresponding product family. "None" means no RoHS Compatible product is available in that product family. For Toshiba's definitions of concepts related to the RoHS Directive and RoHS Compatibility, please click here.
The RoHS compatibility information provided herein is to the best of Toshiba's knowledge and belief accurate as of the date Toshiba entered the information into this database. Information is subject to change at any time without notice.
Please contact your Toshiba sales representative for detailed environmental information about each specific part number or product, such as RoHS compatibility or material content. Please use Toshiba products only in compliance with all applicable laws and regulations concerning the inclusion or use of controlled substances, including without limitation the RoHS Directive.TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.
Reliability data are provided for your reference only, please contact your Toshiba sales representative for detailed reliability information about each part number.
For product delivery, additional characters will be added to the part numbers shown on this website. For details, please ask your local distributor, or send an inquiry accessed from "Contact Us" on this website.

Application Scope	Switching regulators
Polarity	N-ch
RoHS Compatible Product(s) (#)	Available

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TW092V65C

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包裝資訊

絕對最大額定值

電器特性

文檔

參考設計

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相關信息

Notes