Inverter for xEV

Inverter for xEV

Such as reduction of power consumption and miniaturization are important in designing xEV inverter. Toshiba provides information on a wide range of semiconductor products suitable for motor drive circuit units, etc., along with circuit configuration examples.

總方塊圖

點選總方塊圖中要查看詳細資訊的區域。顯示我們建議的子方塊圖的連結。

 ECU ECU Power Supply Power Supply CAN Communications CAN Communications Gate Drive Gate Drive Gate Drive Gate Drive High Voltage Battery High Voltage Battery Control MCU PWM Signal Gen. Protection Circuit Control MCUPWM Signal Gen.Protection Circuit M M IGBT Module IGBT Module (Isolation) (Isolation) Reactor Current Battery Voltage Reactor Temperature IGBT Temp... Reactor CurrentBattery VoltageReactor TemperatureIGBT TemperatureBoard Temperature3-Phase Output Current Gate Drive Supply Voltage Isolation Amplifier Isolation Amplifier M M IGBT Module IGBT Module BMS BMS Drive circuit for brushless DC motor
Drive circuit for brushless DC motor

Example of drive circuit for brushless DC motor

子方塊圖

Drive circuit for brushless DC motor
Drive circuit for brushless DC motor

Example of drive circuit for brushless DC motor

Example of drive circuit for brushless DC motor
IC output photocoupler
器件型號
Toshiba Package Name 5pin SO6 5pin SO6 5pin SO6 5pin SO6 5pin SO6
BVS (Min) [Vrms] @ t = 60 [s] 3750 3750 3750 3750 3750
VCC / VDD (Min) [V] 4.5     4.5 4.5
VCC / VDD (Max) [V] 20 30   5.5 5.5
ICC / IDD (Max) [mA]          
Output Interface          
General purpose small signal MOSFET
器件型號
Toshiba Package Name S-Mini S-Mini VESM
VDSS (Max) [V] 60 -60 -20
ID (Max) [A] 0.4 -0.4 -0.8
RDS(ON) (Max) [Ω] @ |VGS| = 4.5 [V] 1.75 1.9 0.39
Polarity N-ch P-ch P-ch
General purpose small signal bipolar transistor
器件型號
Toshiba Package Name SSM SSM USM USM S-Mini S-Mini
VCEO (Max) [V] -50 50 50 -50 50 -50
IC (Max) [A] -0.15 0.15 0.15 -0.15 0.15 -0.15
Polarity PNP NPN NPN PNP NPN PNP
Small signal bias resistor built-in transistor (BRT)
器件型號
Toshiba Package Name ES6 ES6 US6 US6
VCEO (Q1) (Max) [V] 50 -50 50 -50
VCEO (Q2) (Max) [V] 50 -50 50 -50
IC (Q1) (Max) [A] 0.1 -0.1 0.1 -0.1
IC (Q2) (Max) [A] 0.1 -0.1 0.1 -0.1
Polarity (Q1) NPN PNP NPN PNP
Polarity (Q2) NPN PNP NPN PNP
TVS diode (for CAN communication)
器件型號
Toshiba Package Name USM USM USM
VESD (Max) [kV] +/-30 +/-25 +/-20
IR (Max) [µA] 0.1 0.1 0.1
Rdyn (Typ.) [Ω] 0.8 1.1 1.5
CT (Typ.) [pF] @ VR = 0 [V], f = 1 [MHz] 9 9 6.5

解決方案

這些文件說明推薦的半導體產品的要點及其特徵,方便產品選擇。

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