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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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Find everything you need for your next product design. Simply select an application and click through to the block diagram to discover our semiconductor solutions.

新產品/新聞

Power supply circuit (Battery type)

Example of the power management and the reverse current prevention circuit when the battery is in use

Power supply circuit (Battery type)

Lineup

Small signal MOSFET

Part number SSM3J64CTC SSM3K16CTC
Package CST3C CST3C
RDS(ON) (Typ.) [Ω] @ | VGS = 2.5 V | 0.4 2.1
ID [A] -1 0.2
VDSS [V] -12 20
VGSS [V] ±10 ±10
Polarity P-ch N-ch

Schottky barrier diode

Part number CTS05S30
Package CST2
IO [A] 0.5
VR [V] 20
VF (Typ.) [V] @IF = 0.1 A
0.28
IR (Max) [mA] @VR = 10 V 
0.15

N-ch MOSFET gate driver IC

Part number VIN_OVLO
Min / Max [V]
VGS
Typ. / Max [V]
N-ch MOSFET type
can be driven
Package
TCK401G Over 28 Max 10
(VIN ≥ 12 V)
Single high side
Common Source
WCSP6E
TCK402G
TCK420G 26.50 / 28.50 10 / 11
(VIN ≥ 5 V)

Single high side

Common Drain

WCSP6G
TCK421G 22.34 / 24.05
TCK422G
13.61 / 14.91
TCK423G 13.61 / 14.91 5.6 / 6.3
TCK424G 10.35 / 11.47
TCK425G 5.76 / 6.87

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