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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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Gate resistors are used to control over-current in gate drivers and to reduce overshoot between the drain and source during switching (EMI noise-reduction).
For MOSFET operation, the switching time (rise and fall time) of MOSFET varies depending on the resistor of the connected gate.
When the switching time is short or long, the following problems may occur. Please set the switching time suitable for the system.
In the bridge circuit, a short circuit may occur across the upper and lower MOSFETs by combination of the gate resistances.
Therefore, it is necessary to consider the optimum gate resistance.
For details on how to suppress parasitic oscillations in MOSFET parallel operation, see what are the considerations when using MOSFETs in parallel?
What are the considerations when using MOSFETs in parallel?
See also the pages and documentation below.