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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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When using a MOSFET as a load switch, how do I reduce the inrush current that occurs?

A circuit diagram showing the use of a MOSFET as a load switch

The following figure is a circuit diagram showing the use of a MOSFET as a load switch.
Generally, large capacitor Co for voltage stabilization is connected to the output side of the MOSFET.
When the MOSFET turns on, inrush current IRUSH flows to charge this capacitor.
This inrush current is reduced by increasing the series gate resistor Rgate.
When the gate resistance increases, the rising output current becomes less pronounced.
However, if increasing gate resistance affects the switching speed and loss, it is necessary to select the suitable gate resistance on your using condition.
For how to determine the gate resistance, please refer to “MOSFET Gate Drive Circuit:Power MOSFET Application Notes.”

Additionally, Toshiba offers a lineup of load switch ICs that can reduce inrush current. Please refer to the lineup and consider using it.